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ASTM Selected Technical Papers
Recombination Lifetime Measurements in Silicon
By
D Gupta,
D Gupta
1
Symposium chairman and co-editor
?Mitsubishi Silicon America
?Palo Alto, CA
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FR Backer,
FR Backer
2
Symposium co-chairman and co-editor
?Wacker Siltronic Corp.
?Portland, OR
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W Hughes
W Hughes
3
Symposium co-chairman and co-editor
?MEMC Electronics Materials Inc.
?St. Peters, MO
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ISBN-10:
0-8031-2489-9
ISBN:
978-0-8031-2489-9
No. of Pages:
379
Publisher:
ASTM International
Publication date:
1998
eBook Chapter
Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit?
By
ER Weber
,
ER Weber
1Department of Materials Science,
University of California
, 577 Evans Hall, Berkeley CA 94720-1760,
USA
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AA Istratov
,
AA Istratov
1Department of Materials Science,
University of California
, 577 Evans Hall, Berkeley CA 94720-1760,
USA
2
Institute of Physics of St.-Petersburg State University
, St.-Petersburg, 198904
.Russia
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SA McHugo
,
SA McHugo
1Department of Materials Science,
University of California
, 577 Evans Hall, Berkeley CA 94720-1760,
USA
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H Hieslmair
,
H Hieslmair
1Department of Materials Science,
University of California
, 577 Evans Hall, Berkeley CA 94720-1760,
USA
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C Flink
C Flink
1Department of Materials Science,
University of California
, 577 Evans Hall, Berkeley CA 94720-1760,
USA
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Page Count:
12
-
Published:1998
Citation
Weber, E, Istratov, A, McHugo, S, Hieslmair, H, & Flink, C. "Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit?." Recombination Lifetime Measurements in Silicon. Ed. Gupta, D, Backer, F, & Hughes, W. 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959 : ASTM International, 1998.
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The influence of transition metals on minority carrier diffusion length in silicon is discussed. It is shown that transition metals easily precipitate on silicon lattice microdefects. These precipitates can not be easily dissolved, which makes gettering procedure ineffective. This conclusion is confirmed by experiments on FZ, CZ and photovoltaic silicon, discussed in this paper. The recombination activity of interstitial copper and its capture cross-section for electrons are determined. The recombination activity of interstitial and precipitated copper and iron are compared. It is shown that the precipitates of copper have much higher recombination activity than the interstitial copper, whereas iron is very active in both precipitated and interstitial form.
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