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ASTM Selected Technical Papers
Semiconductor Fabrication: Technology and Metrology
By
ISBN-10:
0-8031-1273-4
ISBN:
978-0-8031-1273-5
No. of Pages:
485
Publisher:
ASTM International
Publication date:
1989
eBook Chapter
Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride
By
LD Clements
,
LD Clements
1Dr. Clements is
Professor and Chair
and Mr. Busse is a Graduate Research Assistant
at the Department of Chemical Engineering, University of Nebraska - Lincoln
, Lincoln, NE 68588-0126
. Mr Mehta is the Japan Process Engineering Manager
, FSI International
, 322 Lake Hazeltine Drive, Chaska, MN 55318-1096
.
Search for other works by this author on:
JE Busse
,
JE Busse
1Dr. Clements is
Professor and Chair
and Mr. Busse is a Graduate Research Assistant
at the Department of Chemical Engineering, University of Nebraska - Lincoln
, Lincoln, NE 68588-0126
. Mr Mehta is the Japan Process Engineering Manager
, FSI International
, 322 Lake Hazeltine Drive, Chaska, MN 55318-1096
.
Search for other works by this author on:
J Mehta
J Mehta
1Dr. Clements is
Professor and Chair
and Mr. Busse is a Graduate Research Assistant
at the Department of Chemical Engineering, University of Nebraska - Lincoln
, Lincoln, NE 68588-0126
. Mr Mehta is the Japan Process Engineering Manager
, FSI International
, 322 Lake Hazeltine Drive, Chaska, MN 55318-1096
.
Search for other works by this author on:
Page Count:
20
-
Published:1989
Citation
Clements, L, Busse, J, & Mehta, J. "Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride." Semiconductor Fabrication: Technology and Metrology. Ed. Gupta, D. 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959 : ASTM International, 1989.
Download citation file:
A novel dry etching process for silicon dioxide has been developed. This process, carried out at ambient temperature and pressure, uses anhydrous hydrogen fluoride, water vapor in a nitrogen carrier, and a unique processing sequence to achieve etch rates of about 200A/second, with 5 percent or better uniformity.
The overall reaction is a complicated sequence of surface hydration and surface fluorination by adsorption, reaction, and product desorption. This paper presents two proposed reaction mechanisms and describes how experimental data from a laminar flow reactor were used to evaluate the mechanisms.
References
1.
Winters
, H. F.
and Coburn
, J. W.
, “The Etching of Silicon with XeF2 Vapor
,” Applied Physics Letters
0003-6951, Vol. 34
, No. 1
, 1979
, pp. 70-73.2.
Beyer
, K. D.
and Kastl
, R. H.
, “Impact of Deionized Water Rinses on Silicon Surface Clenaing
,” J. Electrochem Soc.
, Vol. 129
, No. 5
, 1982
, pp. 1027-1029.3.
Blackwood
, R. S.
, Biggerstaff
, R. L.
, Clements
, L. D.
, and Cleavelin
C. R.
, “Gaseous Process and Apparatus for Removing Films from Substrates
,” U.S. Patent 4,749,440, 07
06
1988
.4.
Novak
, R. E.
, “Anhydrous HF Etching of Native SiO2: Applications to Device Fabrication
,” Solid State Technology
0038-111X, Vol. 31
, No. 3
, 1988
, pp. 39-41.5.
Sze
, S. M.
, VLSI Technology
, McGraw-Hill Book Company
, New York
, 1983
.6.
Ruska
, W. S.
, Microelectonic Processing, An Introduction to the Manufacture of Integrated Circuits
, McGraw-Hill Book Company
, New York
, 1987
.7.
Voronin
, E. F.
, “Spectroscopic Investigation of Hydrogen Fluoride Chemisorption on the Surface of Aerosils with Various Degrees of Dehydration
,” Zhurnal Prikladnoi Spektroscopii
, Vol. 42
, No. 6
, 1985
, pp. 954-959.8.
Tyapkina
, V. V.
and Guseva
, N. S.
, “Interaction of a Silicon Surface with Fluorine and Hydrogen Fluoride
,” Russian Journal of Physical Chemistry
, Vol. 40
, No. 5
, 1966
, pp. 573-576.9.
Arslambekov
, V. A.
, Corbunova
, K. M.
, and Guseva
, N. S.
, “Reaction of Si with Gaseous HF
,” Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy
, Vol. 12
, 1976
, pp. 2124-2126.10.
White
, L. K.
, “Etch Rates of SiO2 Films in Deuterated Acidic Fluorides
,” Thin Solid Films
0040-6090, Vol. 79
, 1981
, pp. L73-L76.11.
Bersin
, R. L.
and Reichelfelder
, R. F.
, “The DryOx Process For Etching Silicon Dioxide
,” Solid State Technology
0038-111X, Vol. 20
, No. 4
, 1977
, pp. 78-80.12.
Chukin
, G. D.
, “An IR Spectroscopic Study of the Surface Properties of Fluorinated Silica Gel
,” Zhurnal Prikladnoi Spektroskopii
, Vol. 81
, No.5
, 1974
, pp. 879-884.13.
Clements
, L. D.
, Busse
, J. E.
, Smith
, G. W.
, and Mehta
, J.
, “Hydrogen Fluoride Dry Etching of Silicon Dioxide: Process Modelling for a Laminar Flow Reactor
,” presented at 172nd Meeting of The Electrochemical Society
, October 18–23, 1987, Honolulu, Hawaii
.14.
Busse
, J. E.
, “The Reaction Modelling of a Vapor-Phase Semiconductor Etching Process
,” M.S. Thesis, University of Nebraska-Lincoln
, 1987
.15.
Cleavelin
, C. R.
and Duranko
, G. T.
, “Silicon Dioxide Removal in Anhydrous HF Gas
,” Semiconductor International
, Vol. 10
, No. 12
, 1987
, pp 94-98.
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