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ASTM Selected Technical Papers
Semiconductor Fabrication: Technology and Metrology
By
DC Gupta
DC Gupta
1
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ISBN-10:
0-8031-1273-4
ISBN:
978-0-8031-1273-5
No. of Pages:
485
Publisher:
ASTM International
Publication date:
1989

In this paper we examine the effect of dry etching on p-type and n-type material implanted with 11B+ at 100 keV to doses of 1E12, 1E13, 1E14, 1E15, and 1E16 cm−2. Hydrogen-containing etch chemistries and typical etch parameters are simulated by Ion Beam Etching with 100% deuterium. We show that for deuteration of 1E12 and 1E13 cm−211B+ implants into p-type material, deep deactivation, as is observed for unimplanted material, is suppressed but still observed. Deuteration of the same low dose 11B+ implants into n-type material expose two important results. The first is that hydrogen preferentially “pairs” with boron in a compensated n-type environment. The second is that hydrogen deactivates boron acceptors not only in the absence of free holes but even when the Fermi level is near the conduction band edge.

1.
Heddleson
J. M.
,
Horn
M. W.
and
Fonash
S. J.
, “
Effects of Dry Etching on the Electrical Properties of Silicon
”,
Proceedings of the 31st International Symposium on Electron, Ion and Photon Beams
,
1987
.
Journal of Vacuum Science and Technology
 0022-5355 
B 6
(
1
), Jan/Feb 1988 pp. 280-283.
2.
Horn
M. W.
,
Heddleson
J. M.
, and
Fonash
S. J.
, “
Permeation of Hydrogen into Silicon During Low-Energy Hydrogen Ion Beam Bombardment
”,
Applied Physics Letters
 0003-6951, Vol.
51
, No.
7
,
17
08
1987
, pp. 490-492.
3.
Horn
M. W.
,
Heddleson
J. M.
, and
Fonash
S. J.
, “
Dopant Deactivation and Diffusion in Low Energy Ion Beam Deuterated Silicon
”, Presented at the
Material Research Society Meeting in Boston
,
Mass.
, Fall
1987
.
4.
Horn
M. W.
,
Heddleson
J. M.
,
Fonash
S. J.
, and
Nguyen
D. N.
, “
Dopant Deactivation in N-Type Silicon During Ion Etching with Hydrogen Present
”, Presented at the
AVS 34th National Vacuum Symposium and Topical Conference
, November 2–5, 1987,
Anaheim, CA
.
5.
Mikkelsen
J. C.
, “
Atomic deuterium passivation of boron acceptor levels in silicon crystals
”,
Applied Physics Letters
 0003-6951, Vol.
46
, No.
9
,
1985
, p. 882.
6.
Johnson
N. M.
, “
Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon
”,
Physical Review B
, Vol.
31
, No.
8
,
1985
, p. 5525.
7.
Johnson
N. M.
, “
Electric field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal silicon
”,
Applied Physics Letters
 0003-6951, Vol.
47
, No.
8
,
1985
, p. 874.
8.
Pankove
J. I.
,
Magee
C. W.
, and
Wance
R. O.
, “
Hole-mediated chemisorption of atomic hydrogen in silicon
”,
Applied Physics Letters
 0003-6951, Vol.
47
, No.
7
,
1985
, p. 748.
9.
Tavendale
A. J.
,
Alexiev
D.
, and
Williams
A. A.
, “
Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated silicon
”,
Applied Physics Letters
 0003-6951, Vol.
47
, No.
3
,
1985
, p. 316.
10.
Tavendale
A. J.
,
Williams
A. A.
,
Pearton
S. J.
,
Material Research Society Symposium Proceedings
, Vol.
104
,
1987
, p.285.
11.
Tavendale
A. J.
,
Williams
A. A.
,
Alexiev
D.
,
Pearton
S. J.
,
Material Research Society Symposium Proceedings
, Vol.
59
,
1986
, p. 469.
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