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ASTM Selected Technical Papers
Emerging Semiconductor Technology
By
DC Gupta
DC Gupta
Symposium Chairman and Co-Editor
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ISBN-10:
0-8031-0459-6
ISBN:
978-0-8031-0459-4
No. of Pages:
719
Publisher:
ASTM International
Publication date:
1987

Exploratory studies have been carried out with reactively sputtered thin films of several transition metal oxides and co-sputtered mixtures with SiO2. Good insulation behavior is observed following postdeposition oxidation anneals. Best overall electrical properties are observed with mixtures of HfO2 and SiO2, in combination with additional layers of thermal SiO2 and CVD Si3N4. Significant reduction in dielectric constant is observed with all the transition metal oxides with sub-30 nm films. High capacitance with stacks containing thermal SiO2, mixtures of HfO2 and SiO2, and CVD Si3N4 may be due to a charge storage mechanism.

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, “
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Elta
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, “
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”,
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,
05
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Seki
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,
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, and
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”,
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, No.
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,
06
1984
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, and
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, “
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Kansenberger
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,
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,
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,
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Smith
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, and
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Smith
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, “
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Belog
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, “
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”,
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,
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13.
Taubner
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,
Dumbri
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, and
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, “
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”,
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,
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, and
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”,
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,
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,
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,
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, and
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, “
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”,
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78
,
04
1981
, pp. 229-233.
16.
Adler
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, “
A High Performance High Density 256K DRAM Utilizing 1X Projection Lithography
”, Paper No. 13.3,
IEDM
, Washington, D.C.,
05
12
1983
.
17.
Roberts
S.
,
Ryan
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, and
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, “
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,
Journal of the Electrochemical Society
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,
07
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18.
Herring
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, “
Advances in Reduced Pressure Epitaxy
”,
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, pp. 75-79.
19.
Reizman
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, and
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, “
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”,
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,
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20.
Adams
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, and
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, “
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”,
Journal of the Electrochemical Society
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, No.
2
,
02
1981
, pp. 366-370.
21.
Sze
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, “
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,
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,
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,
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.
22.
Zirinsky
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, and
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, “
Selective Studies of Chemical Vapor Deposited Aluminum Nitride-Silicon Nitride Mixture Films
”,
Journal of the Electrochemical Society
 0013-4651, Vol.
125
, No.
2
,
02
1978
, pp. 305-314.
23.
Denning
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, and
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, “
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”,
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,
1985
, pp. 163-170.
24.
Lindhard
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,
Scharff
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, and
Schiott
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, “
Range Concepts and Heavy Ion Ranges
”,
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, Vol.
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,
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, pp. 1-35.
25.
Seki
S.
,
Unagami
T.
, and
Tsujiyama
B.
, “
Electrical Characteristics of the R.F. Magnetron Sputtered Tantalum Pentoxide-Silicon Interface
”,
Journal of the Electrochemical Society
 0013-4651, Vol.
131
, No.
11
,
11
1984
, pp. 2621-2624.
26.
Anderson
R. M.
, and
Kerr
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, “
Evidence for Surface Asperity Mechanism of Conductivity in Oxide Grown on Polycrystalline Silicon
”,
Journal of Applied Physics
 0021-8979, Vol.
48
, No.
11
,
11
1977
, pp. 4834-4836.
27.
Shappir
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,
Anis
A.
, and
Pinsky
I.
, “
Investigation of MOS Capacitors with Thin ZrO2 Layers and Various Gate Materials for Advanced DRAM Applications
”,
IEEE Transactions on Electron Devices
 0018-9383, Vol.
ED-33
, No.
4
,
04
1986
, pp. 442-448.
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