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ASTM Selected Technical Papers
Emerging Semiconductor Technology
By
DC Gupta
DC Gupta
Symposium Chairman and Co-Editor
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ISBN-10:
0-8031-0459-6
ISBN:
978-0-8031-0459-4
No. of Pages:
719
Publisher:
ASTM International
Publication date:
1987
eBook Chapter
Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators
By
S Roberts
,
S Roberts
1Dr. Roberts is an
advisory engineer
, Mr. Ryan is a staff engineer
, and Mr. Martin is a senior associate engineer
at IBM Corporation
, General Technology Division, Essex Junction, Vermont 05452
.
Search for other works by this author on:
JG Ryan
,
JG Ryan
1Dr. Roberts is an
advisory engineer
, Mr. Ryan is a staff engineer
, and Mr. Martin is a senior associate engineer
at IBM Corporation
, General Technology Division, Essex Junction, Vermont 05452
.
Search for other works by this author on:
DW Martin
DW Martin
1Dr. Roberts is an
advisory engineer
, Mr. Ryan is a staff engineer
, and Mr. Martin is a senior associate engineer
at IBM Corporation
, General Technology Division, Essex Junction, Vermont 05452
.
Search for other works by this author on:
Page Count:
13
-
Published:1987
Citation
Roberts, S, Ryan, J, & Martin, D. "Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators." Emerging Semiconductor Technology. Ed. Gupta, D. 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959 : ASTM International, 1987.
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Exploratory studies have been carried out with reactively sputtered thin films of several transition metal oxides and co-sputtered mixtures with SiO2. Good insulation behavior is observed following postdeposition oxidation anneals. Best overall electrical properties are observed with mixtures of HfO2 and SiO2, in combination with additional layers of thermal SiO2 and CVD Si3N4. Significant reduction in dielectric constant is observed with all the transition metal oxides with sub-30 nm films. High capacitance with stacks containing thermal SiO2, mixtures of HfO2 and SiO2, and CVD Si3N4 may be due to a charge storage mechanism.
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