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ASTM Selected Technical Papers
Emerging Semiconductor Technology
By
DC Gupta
DC Gupta
Symposium Chairman and Co-Editor
Search for other works by this author on:
ISBN-10:
0-8031-0459-6
ISBN:
978-0-8031-0459-4
No. of Pages:
719
Publisher:
ASTM International
Publication date:
1987
Description
Fourth in a series, STP 960 addresses new problems in semiconductor processing for the mid ‘80s. A total of 50 papers cover; Epitaxial Technology; Dielectrics and Junction Formation Techniques; Material Defects, Oxygen and Carbon in Silicon; Yield Enhancement and Contamination Control Aspects; Dopant Profiling Techniques and In-Process Measurements; and Fab Equipment: Automation and Reliability.
Gupta, D.
Emerging Semiconductor Technology. ISBN-10: 0-8031-0459-6
ISBN: 978-0-8031-0459-4
No. of Pages: 719
ISBN (electronic): 978-0-8031-5021-8
Publisher: ASTM International
Published: 1987
Download citation file:
Table of Contents
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IntroductionByDC GuptaDC GuptaSymposium Chairman and Co-EditorSearch for other works by this author on:
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Silicon and Semiconductors: Partners in the Late 1980'sByJE SpringgateJE Springgate1James E. Springgate is thePresident,Monsanto Electronic Materials Company,755 Page Mill Road, Palo Alto, California.Search for other works by this author on:
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ASTM and Semi Standards for the Semiconductor IndustryByRI ScaceRI Scace1Robert I. Scace isDeputy Director,Center for Electronics and Electrical Engineering at the National Bureau of Standards, Building 220 Room B358,Gaithersburg, MD 20899.Search for other works by this author on:
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Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVDByR ReifR Reif1Dr. Rafael Reif is anAssociate Professor of Electrical Engineeringat theMassachusetts Institute of Technology,Cambridge, MA 02139Search for other works by this author on:
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Thin Silicon Epitaxial Films Deposited at Low TemperaturesByH-R Chang,H-R Chang1Dr. Chang is aresearch engineer, and Mr. Rosczak is aspecialistatGeneral Electric Company, Research and Development Center,1 River Road, Schenectady, N.Y. 12345.Search for other works by this author on:JS RosczakJS Rosczak1Dr. Chang is aresearch engineer, and Mr. Rosczak is aspecialistatGeneral Electric Company, Research and Development Center,1 River Road, Schenectady, N.Y. 12345.Search for other works by this author on:
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Thin Epitaxial Silicon by CVDBySM Fisher,SM Fisher1Mr. Fisher is theApplications Laboratory ManageratGemini Research,49026 Milmont Dr., Fremont, CA 95438. Dr. Hammond isVice-President of Tetron, a subsidiary ofGemini Research, and Mr. Sandler is aSenior Applications EngineeratGemini Research.Search for other works by this author on:ML Hammond,ML Hammond1Mr. Fisher is theApplications Laboratory ManageratGemini Research,49026 Milmont Dr., Fremont, CA 95438. Dr. Hammond isVice-President of Tetron, a subsidiary ofGemini Research, and Mr. Sandler is aSenior Applications EngineeratGemini Research.Search for other works by this author on:NP SandlerNP Sandler1Mr. Fisher is theApplications Laboratory ManageratGemini Research,49026 Milmont Dr., Fremont, CA 95438. Dr. Hammond isVice-President of Tetron, a subsidiary ofGemini Research, and Mr. Sandler is aSenior Applications EngineeratGemini Research.Search for other works by this author on:
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Effects of Gettering on Epi Quality for CMOS TechnologyByC-C Daniel Wong,C-C Daniel Wong1Dr. Wong issenior process development engineeratIntegrated Device Technology, Inc.,3236 Scott Blvd., Santa Clara, CA 95051; Mr. Borland issenior staff engineeratApplied Materials, Inc.,3050 Bowers Ave., Santa Clara, CA 95051; Dr. Hahn isanalytical lab manageratSiltec Corp.,423 National Ave., Mountain View, CA 94043.Search for other works by this author on:JO Borland,JO Borland1Dr. Wong issenior process development engineeratIntegrated Device Technology, Inc.,3236 Scott Blvd., Santa Clara, CA 95051; Mr. Borland issenior staff engineeratApplied Materials, Inc.,3050 Bowers Ave., Santa Clara, CA 95051; Dr. Hahn isanalytical lab manageratSiltec Corp.,423 National Ave., Mountain View, CA 94043.Search for other works by this author on:S HahnS Hahn1Dr. Wong issenior process development engineeratIntegrated Device Technology, Inc.,3236 Scott Blvd., Santa Clara, CA 95051; Mr. Borland issenior staff engineeratApplied Materials, Inc.,3050 Bowers Ave., Santa Clara, CA 95051; Dr. Hahn isanalytical lab manageratSiltec Corp.,423 National Ave., Mountain View, CA 94043.Search for other works by this author on:
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Silicon Epitaxial Growth on N+ Substrate for CMOS ProductsByRB SwaroopRB Swaroop1Dr. Robert Swaroop is aManagerat theFairchild Semiconductors,545 Whisman Road, Mountain View, CA 94039.Search for other works by this author on:
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Characterization of the in Situ HCl Etch for Epitaxial SiliconByJW Medernach,JW Medernach1Dr. Medernach is aMember of the Technical StaffatSandia National Laboratories, P. O. 5800,Albuquerque, NM 87185; and Dr. Wells is theManager of MOS DevelopmentatSperry Univac,1500 Tower View Dr., Eagan, MN 55122.Search for other works by this author on:VA WellsVA Wells1Dr. Medernach is aMember of the Technical StaffatSandia National Laboratories, P. O. 5800,Albuquerque, NM 87185; and Dr. Wells is theManager of MOS DevelopmentatSperry Univac,1500 Tower View Dr., Eagan, MN 55122.Search for other works by this author on:
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Doped Oxide Spin-On Source DiffusionByV RamamurthyV Ramamurthy1Dr. V. Ramamurthy isSenior EngineeratBharat Heavy Electricals Limited, Corporate Research and Development Division,Vikasnagar, Hyderabad-500 593,.IndiaSearch for other works by this author on:
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Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading ResistanceByE Lora-Tamayo,E Lora-Tamayo1Dr. Lora-Tamayo isresearch scientistat theNational Center of Microelectronics-CSIC, UAB Bellaterra(Barcelona-); Dr. Pontcharra and Dr. Bruel areSpainresearch scientistsatLETI-IRDI, CEA-CENC, 85,38041 Grenoble Cedex().FranceSearch for other works by this author on:J Du Port de Pontcharra,J Du Port de Pontcharra1Dr. Lora-Tamayo isresearch scientistat theNational Center of Microelectronics-CSIC, UAB Bellaterra(Barcelona-); Dr. Pontcharra and Dr. Bruel areSpainresearch scientistsatLETI-IRDI, CEA-CENC, 85,38041 Grenoble Cedex().FranceSearch for other works by this author on:M BruelM Bruel1Dr. Lora-Tamayo isresearch scientistat theNational Center of Microelectronics-CSIC, UAB Bellaterra(Barcelona-); Dr. Pontcharra and Dr. Bruel areSpainresearch scientistsatLETI-IRDI, CEA-CENC, 85,38041 Grenoble Cedex().FranceSearch for other works by this author on:
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Measurements of Cross-Contamination Levels Produced by Ion ImplantersByLA Larson,LA Larson1Drs. Larson and Kirby areEngineering Section Head and Member Technical Staffrespectively atNational Semiconductor Corp.,M/S CT035, 2900 Semiconductor Dr., P.O. Box 58090,Santa Clara CA 95052-8090Search for other works by this author on:BJ KirbyBJ Kirby1Drs. Larson and Kirby areEngineering Section Head and Member Technical Staffrespectively atNational Semiconductor Corp.,M/S CT035, 2900 Semiconductor Dr., P.O. Box 58090,Santa Clara CA 95052-8090Search for other works by this author on:
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Some Aspects of Productivity of a Low Pressure CVD ReactorByS MiddlemanS Middleman1Dr. Middleman isProfessor of Chemical Engineeringat theUniversity of California, San Diego, B-010,La Jolla, CA 92093.Search for other works by this author on:
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Deposition and Properties of Ultra-Thin High Dielectric Constant InsulatorsByS Roberts,S Roberts1Dr. Roberts is anadvisory engineer, Mr. Ryan is astaff engineer, and Mr. Martin is asenior associate engineeratIBM Corporation, General Technology Division,Essex Junction, Vermont 05452.Search for other works by this author on:JG Ryan,JG Ryan1Dr. Roberts is anadvisory engineer, Mr. Ryan is astaff engineer, and Mr. Martin is asenior associate engineeratIBM Corporation, General Technology Division,Essex Junction, Vermont 05452.Search for other works by this author on:DW MartinDW Martin1Dr. Roberts is anadvisory engineer, Mr. Ryan is astaff engineer, and Mr. Martin is asenior associate engineeratIBM Corporation, General Technology Division,Essex Junction, Vermont 05452.Search for other works by this author on:
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The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam NitridationByH-S LeeH-S Lee1Dr. Han-Sheng Lee is asenior staff research engineerat Electronics Department,General Motors Research Labs.,30500 Mound Rd., Warren, Michigan 48090-9055.Search for other works by this author on:
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Rie Damage and Its Control in Silicon ProcessingBySJ Fonash,SJ Fonash1Dr. Fonash isAlumni Professor of Engineering SciencesatThe Pennsylvania State University,University Park, PA 16802and Dr. Rohatgi isAssociate Professor of Electrical EngineeringatGeorgia Institute of Technology,Atlanta, GA 30332.Search for other works by this author on:A RohatgiA Rohatgi1Dr. Fonash isAlumni Professor of Engineering SciencesatThe Pennsylvania State University,University Park, PA 16802and Dr. Rohatgi isAssociate Professor of Electrical EngineeringatGeorgia Institute of Technology,Atlanta, GA 30332.Search for other works by this author on:
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The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric FilmsBySV Nguyen,SV Nguyen1M. L. Gibson is alaboratory specialist, and S. V. Nguyen, J. R. Abernathey, and S. A. Fridmann areengineers/scientistsatIBM General Technology Division,Essex Junction, VT 05452.Search for other works by this author on:JR Abernathey,JR Abernathey1M. L. Gibson is alaboratory specialist, and S. V. Nguyen, J. R. Abernathey, and S. A. Fridmann areengineers/scientistsatIBM General Technology Division,Essex Junction, VT 05452.Search for other works by this author on:SA Fridmann,SA Fridmann1M. L. Gibson is alaboratory specialist, and S. V. Nguyen, J. R. Abernathey, and S. A. Fridmann areengineers/scientistsatIBM General Technology Division,Essex Junction, VT 05452.Search for other works by this author on:ML GibsonML Gibson1M. L. Gibson is alaboratory specialist, and S. V. Nguyen, J. R. Abernathey, and S. A. Fridmann areengineers/scientistsatIBM General Technology Division,Essex Junction, VT 05452.Search for other works by this author on:
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Monte Carlo Simulation of Plasma Etch Emission EndpointByEJ BawolekEJ Bawolek1Mr. Bawolek is aSenior Member of Technical StaffatGTE Laboratories Microelectronics Technology Center,2010 W. 14th Street, Tempe, AZ 85281.Search for other works by this author on:
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Profile Control of Plasma Etched Polysilicon Using Implant DopingByT Abraham,T Abraham1T. Abraham isSenior Development Engineerand R. Theriault is theManager, IC DevelopmentatNorthern Telecom Ltd., P.O. Box 3511,Station C, Ottawa, Ontario,.CanadaK1Y 4H7Search for other works by this author on:R TheriaultR Theriault1T. Abraham isSenior Development Engineerand R. Theriault is theManager, IC DevelopmentatNorthern Telecom Ltd., P.O. Box 3511,Station C, Ottawa, Ontario,.CanadaK1Y 4H7Search for other works by this author on:
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The Effects of Plasma Processing of Dielectric Layers on Gallium Arsenide Integrated CircuitsByKC Vanner,KC Vanner1The authors areresearch scientistsatPlessey Research (Caswell) Ltd., Allen Clark Research Centre,Caswell, Towcester, Northamptonshire,.EnglandSearch for other works by this author on:JR Cockrill,JR Cockrill1The authors areresearch scientistsatPlessey Research (Caswell) Ltd., Allen Clark Research Centre,Caswell, Towcester, Northamptonshire,.EnglandSearch for other works by this author on:JA TurnerJA Turner1The authors areresearch scientistsatPlessey Research (Caswell) Ltd., Allen Clark Research Centre,Caswell, Towcester, Northamptonshire,.EnglandSearch for other works by this author on:
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Quality Control and Optimization During Plasma Deposition of a-Si:HByM Kunst,M Kunst1Drs. Kunst, Werner, Beck, Kuppers, and Lilie areresearch scientists, ProfessorTributsch ismember of the chairmen board of the Bereich Strahlenchemie,Hahn-Meitner-Institut fur Kernforschung Berlin,1000 Berlin 39,.Federal Republic of GermanySearch for other works by this author on:A Werner,A Werner1Drs. Kunst, Werner, Beck, Kuppers, and Lilie areresearch scientists, ProfessorTributsch ismember of the chairmen board of the Bereich Strahlenchemie,Hahn-Meitner-Institut fur Kernforschung Berlin,1000 Berlin 39,.Federal Republic of GermanySearch for other works by this author on:G Beck,G Beck1Drs. Kunst, Werner, Beck, Kuppers, and Lilie areresearch scientists, ProfessorTributsch ismember of the chairmen board of the Bereich Strahlenchemie,Hahn-Meitner-Institut fur Kernforschung Berlin,1000 Berlin 39,.Federal Republic of GermanySearch for other works by this author on:U Kuppers,U Kuppers1Drs. Kunst, Werner, Beck, Kuppers, and Lilie areresearch scientists, ProfessorTributsch ismember of the chairmen board of the Bereich Strahlenchemie,Hahn-Meitner-Institut fur Kernforschung Berlin,1000 Berlin 39,.Federal Republic of GermanySearch for other works by this author on:H TributschH Tributsch1Drs. Kunst, Werner, Beck, Kuppers, and Lilie areresearch scientists, ProfessorTributsch ismember of the chairmen board of the Bereich Strahlenchemie,Hahn-Meitner-Institut fur Kernforschung Berlin,1000 Berlin 39,.Federal Republic of GermanySearch for other works by this author on:
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Effects of Deep UV Radiation on Photoresist in Al EtchBySC Lee,SC Lee1Drs. Lee and Chin wereMembers of the Technical Staff. They are presentlyStaff EngineersatSiliconix Inc.,2201 Laurelwood Road, Santa Clara, CA 95054.Search for other works by this author on:BL ChinBL Chin1Drs. Lee and Chin wereMembers of the Technical Staff. They are presentlyStaff EngineersatSiliconix Inc.,2201 Laurelwood Road, Santa Clara, CA 95054.Search for other works by this author on:
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Influence of X-Ray Exposure Conditions on Pattern QualityByV StarovV Starov1Dr. Starov ismanager, Resist and Application, of the X-ray Lithography ProgramatVarian Associates, Inc.,611 Hansen Way, Mail Stop S-225, Palo Alto, CA 94303.Search for other works by this author on:
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Palladium Silicide Contact Process Development for VLSIByRN SinghRN Singh1Dr. Singh is astaff research scientistatGeneral Electric Company, Corporate Research and Development, PO Box 8,Schenectady, New York 12301.Search for other works by this author on:
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Characterization of Silicon Surface Defects by the Laser Scanning TechniqueByHM Liaw,HM Liaw1Dr. Liaw is asenior member of the technical staff and section managerat theSemiconductor Research and Development Labs (SRDL). Mr. Rose isprincipal staff engineer and a manager for the epitaxial development programof theElectronic Materials Operation. Ms. Nguyen is aprocess engineeratSRDL, Motorola, Inc. Semiconductor Products Sector,5005 East McDowell Rd., Phoenix, Arizona 85008.Search for other works by this author on:JW Rose,JW Rose1Dr. Liaw is asenior member of the technical staff and section managerat theSemiconductor Research and Development Labs (SRDL). Mr. Rose isprincipal staff engineer and a manager for the epitaxial development programof theElectronic Materials Operation. Ms. Nguyen is aprocess engineeratSRDL, Motorola, Inc. Semiconductor Products Sector,5005 East McDowell Rd., Phoenix, Arizona 85008.Search for other works by this author on:HT NguyenHT Nguyen1Dr. Liaw is asenior member of the technical staff and section managerat theSemiconductor Research and Development Labs (SRDL). Mr. Rose isprincipal staff engineer and a manager for the epitaxial development programof theElectronic Materials Operation. Ms. Nguyen is aprocess engineeratSRDL, Motorola, Inc. Semiconductor Products Sector,5005 East McDowell Rd., Phoenix, Arizona 85008.Search for other works by this author on:
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Damage Aspects of Ingot-to-Wafer ProcessingByLD DyerLD Dyer1Dr. Dyer is aSenior Member of Technical Staffin the Silicon Slice Products Department atTexas Instruments Inc.,Sherman, Texas, 75090.Search for other works by this author on:
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Hydrogen in silicon and generation of haze on silicon surface in agingByT Shiraiwa,T Shiraiwa1Dr. Shiraiwa is anexecutive technical counselorofOsaka Titanium Co.,Amagasaki,: S. Inenaga is aJapanresearch scientistofKyushu Electric Metals Co.,Kohoku, Saga,.JapanSearch for other works by this author on:S InenagaS Inenaga1Dr. Shiraiwa is anexecutive technical counselorofOsaka Titanium Co.,Amagasaki,: S. Inenaga is aJapanresearch scientistofKyushu Electric Metals Co.,Kohoku, Saga,.JapanSearch for other works by this author on:
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Identifying Gettered Impurities in Silicon by LIMA AnalysisByMC ArstMC Arst1Dr. Margareth C. Arst isEngineering ManagerforFab Process Materials Engineering, CQ and R at Signetics,811 E. Arques Avenue, Sunnyvale, CA 94086.Search for other works by this author on:
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Effect of Bulk Defects in Silicon on SiO2 Film BreakdownByH Suga,H Suga1Dr. Suga ismanager at semiconductor division,Central Research Institute, Mitsubishi Metal Corporation,1-294, Kitabukuro, Omiya,; Murai isJapan330associate manager at technical division,Japan Silicon Corp.,314, Kanauchi, Nishisangao, Noda,.Japan278Search for other works by this author on:K MuraiK Murai1Dr. Suga ismanager at semiconductor division,Central Research Institute, Mitsubishi Metal Corporation,1-294, Kitabukuro, Omiya,; Murai isJapan330associate manager at technical division,Japan Silicon Corp.,314, Kanauchi, Nishisangao, Noda,.Japan278Search for other works by this author on:
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Free Carrier Absorption and Interstitial Oxygen MeasurementsByWK Gladden,WK Gladden1Mr. Warren K. Gladden is anelectronics engineerand Dr. Aslan Baghdadi is aphysicistin the Semiconductor Electronics Division at theNational Bureau of Standards,Gaithersburg, Maryland 20899.Search for other works by this author on:A BaghdadiA Baghdadi1Mr. Warren K. Gladden is anelectronics engineerand Dr. Aslan Baghdadi is aphysicistin the Semiconductor Electronics Division at theNational Bureau of Standards,Gaithersburg, Maryland 20899.Search for other works by this author on:
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High Reliability Infrared Measurements of Oxygen and Carbon in SiliconByN Inoue,N Inoue1Dr. Inoue is asenior research engineerat theNTT Electrical Communications Laboratories,Atsugi, Kanagawa, 243-01;ProfessorArai is from theInstitute of Applied Physics, Tsukuba University,Niihari, Ibaragi, 305; Dr. T. Nozaki is aprincipal scientistat theInstitute of Physical and Chemical Research,Wako, Saitama, 351; and Mr. K. Endo and Mr. K. Mizuma are withJapan Silicon Co. Ltd.,Noda, Chiba, 278.Search for other works by this author on:T Arai,T Arai1Dr. Inoue is asenior research engineerat theNTT Electrical Communications Laboratories,Atsugi, Kanagawa, 243-01;ProfessorArai is from theInstitute of Applied Physics, Tsukuba University,Niihari, Ibaragi, 305; Dr. T. Nozaki is aprincipal scientistat theInstitute of Physical and Chemical Research,Wako, Saitama, 351; and Mr. K. Endo and Mr. K. Mizuma are withJapan Silicon Co. Ltd.,Noda, Chiba, 278.Search for other works by this author on:T Nozaki,T Nozaki1Dr. Inoue is asenior research engineerat theNTT Electrical Communications Laboratories,Atsugi, Kanagawa, 243-01;ProfessorArai is from theInstitute of Applied Physics, Tsukuba University,Niihari, Ibaragi, 305; Dr. T. Nozaki is aprincipal scientistat theInstitute of Physical and Chemical Research,Wako, Saitama, 351; and Mr. K. Endo and Mr. K. Mizuma are withJapan Silicon Co. Ltd.,Noda, Chiba, 278.Search for other works by this author on:K Endo,K Endo1Dr. Inoue is asenior research engineerat theNTT Electrical Communications Laboratories,Atsugi, Kanagawa, 243-01;ProfessorArai is from theInstitute of Applied Physics, Tsukuba University,Niihari, Ibaragi, 305; Dr. T. Nozaki is aprincipal scientistat theInstitute of Physical and Chemical Research,Wako, Saitama, 351; and Mr. K. Endo and Mr. K. Mizuma are withJapan Silicon Co. Ltd.,Noda, Chiba, 278.Search for other works by this author on:K MizumaK Mizuma1Dr. Inoue is asenior research engineerat theNTT Electrical Communications Laboratories,Atsugi, Kanagawa, 243-01;ProfessorArai is from theInstitute of Applied Physics, Tsukuba University,Niihari, Ibaragi, 305; Dr. T. Nozaki is aprincipal scientistat theInstitute of Physical and Chemical Research,Wako, Saitama, 351; and Mr. K. Endo and Mr. K. Mizuma are withJapan Silicon Co. Ltd.,Noda, Chiba, 278.Search for other works by this author on:
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Nature of Process-Induced Si-SiO2 Defects and Their Interaction with IlluminationByS Kar,S Kar1Ms. Tewari is asenior research assistantandProfessorKar is amember of the Electrical Engineering faculty,Indian Institute of Technology,Kanpur-208016,.IndiaSearch for other works by this author on:M TewariM Tewari1Ms. Tewari is asenior research assistantandProfessorKar is amember of the Electrical Engineering faculty,Indian Institute of Technology,Kanpur-208016,.IndiaSearch for other works by this author on:
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A Strategy for Reducing Variability in a Production Semiconductor Fabrication Area Using the Generation of System Moments MethodByEC MaassEC Maass1E. C. Maass isdevice engineering section managerforMotorola,2200 West Broadway, Mesa, Arizona 85202.Search for other works by this author on:
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Computerized Yield ModelingByCH BeckCH Beck1Mr. Beck is aprocess engineeratSierra Semiconductor,2075 N. Capitol Ave, San Jose, Ca 95132.Search for other works by this author on:
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Particle and Material Control Automation System for VLSI ManufacturingByMD BrainMD Brain1Michael D. Brain is aproject manager responsible for material control projectsatAsyst Technologies, Inc.,46309 Warm Springs Blvd., Fremont, California 94539.Search for other works by this author on:
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Semiconductor Yield Enhancement Through Particle ControlByND Casper,ND Casper1Ms. Casper isSenior Engineer for maskmaking operation.Westinghouse Electric Corporation, Box 1521, MS-3240,Baltimore, Maryland 21203. Mr. Soren is anEngineer in plasma etch process development.Westinghouse Electric Corporation, Box 1521, MS-3974,Baltimore, Maryland 21203.Search for other works by this author on:BW SorenBW Soren1Ms. Casper isSenior Engineer for maskmaking operation.Westinghouse Electric Corporation, Box 1521, MS-3240,Baltimore, Maryland 21203. Mr. Soren is anEngineer in plasma etch process development.Westinghouse Electric Corporation, Box 1521, MS-3974,Baltimore, Maryland 21203.Search for other works by this author on:
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Particulate Control in VLSI GasesByJM Davidson,JM Davidson1Drs. Davidson and Ruane areSenior Scientist and Senior Physicist, respectively, atThe BOC Group, Inc., Group Technical Center,100 Mountain Avenue, Murray Hill, NJ 07974.Search for other works by this author on:TP RuaneTP Ruane1Drs. Davidson and Ruane areSenior Scientist and Senior Physicist, respectively, atThe BOC Group, Inc., Group Technical Center,100 Mountain Avenue, Murray Hill, NJ 07974.Search for other works by this author on:
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Spreading Resistance Measurements — An OverviewByJR EhrsteinJR Ehrstein1Dr. James Ehrstein is aPhysicistin the Semiconductor Electronics Division of theNational Bureau of Standards,Gaithersburg, MD 20899.Search for other works by this author on:
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Some Aspects of Spreading Resistance Profile AnalysisByJ AlbersJ Albers1Dr. John Albers is aphysicistin the Semiconductor Electronics Division at theNational Bureau of Standards,Gaithersburg, Maryland 20899.Search for other works by this author on:
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Spreading Resistance : A Comparison of Sampling Volume Correction Factors in High Resolution Quantitative Spreading ResistanceByM PawlikM Pawlik1M Pawlik,Department Head—Silicon Materials and Characterisation, GEC Research Limited, Hirst Research Centre,East Lane, Wembley, Middlesex HA9 7PPUnited KingdomSearch for other works by this author on:
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Comparison of Impurity Profiles Generated by Spreading Resistance Probe and Secondary Ion Mass SpectrometryByGG Sweeney,GG Sweeney1G. Sweeney and T. Alvarez aresenior scientistsatMotorola Inc.,2200 West Broadway, Mesa, AZ 85202.Search for other works by this author on:TR AlvarezTR Alvarez1G. Sweeney and T. Alvarez aresenior scientistsatMotorola Inc.,2200 West Broadway, Mesa, AZ 85202.Search for other works by this author on:
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Monte Carlo Calculation of Primary Kinematic Knock-on in SimsByJ AlbersJ Albers1Dr. John Albers is aphysicistin the Semiconductor Electronics Division at theNational Bureau of Standards,Gaithersburg, Maryland 20899.Search for other works by this author on:
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A Comparative Study of Carrier Concentration Profiling Techniques in Silicon: Spreading Resistance and Electrochemical CVByM Pawlik,M Pawlik1M Pawlik and R D Groves areHead and Principal Research Scientistof the Silicon Materials and Characterisation Department,GEC Research Limited, Hirst Research Centre,Wembley, Middlesex HA9 7PP, and R A Kubiak, W Y Leong and E H C Parker areReader, Head of Silicon MBE and Research FellowatCity of London Polytechnic,31 Jewry St, London EC3N 2EY.Search for other works by this author on:RD Groves,RD Groves1M Pawlik and R D Groves areHead and Principal Research Scientistof the Silicon Materials and Characterisation Department,GEC Research Limited, Hirst Research Centre,Wembley, Middlesex HA9 7PP, and R A Kubiak, W Y Leong and E H C Parker areReader, Head of Silicon MBE and Research FellowatCity of London Polytechnic,31 Jewry St, London EC3N 2EY.Search for other works by this author on:RA Kubiak,RA Kubiak1M Pawlik and R D Groves areHead and Principal Research Scientistof the Silicon Materials and Characterisation Department,GEC Research Limited, Hirst Research Centre,Wembley, Middlesex HA9 7PP, and R A Kubiak, W Y Leong and E H C Parker areReader, Head of Silicon MBE and Research FellowatCity of London Polytechnic,31 Jewry St, London EC3N 2EY.Search for other works by this author on:WY Leong,WY Leong1M Pawlik and R D Groves areHead and Principal Research Scientistof the Silicon Materials and Characterisation Department,GEC Research Limited, Hirst Research Centre,Wembley, Middlesex HA9 7PP, and R A Kubiak, W Y Leong and E H C Parker areReader, Head of Silicon MBE and Research FellowatCity of London Polytechnic,31 Jewry St, London EC3N 2EY.Search for other works by this author on:EHC ParkerEHC Parker1M Pawlik and R D Groves areHead and Principal Research Scientistof the Silicon Materials and Characterisation Department,GEC Research Limited, Hirst Research Centre,Wembley, Middlesex HA9 7PP, and R A Kubiak, W Y Leong and E H C Parker areReader, Head of Silicon MBE and Research FellowatCity of London Polytechnic,31 Jewry St, London EC3N 2EY.Search for other works by this author on:
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Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process ModelingByGW Banke, Jr,GW Banke, Jr1Mr. Banke, Dr. Varahramyan, and Dr. Slusser areengineers/scientistsatIBM Corporation,Essex Junction, VT 05452.Search for other works by this author on:K Varahramyan,K Varahramyan1Mr. Banke, Dr. Varahramyan, and Dr. Slusser areengineers/scientistsatIBM Corporation,Essex Junction, VT 05452.Search for other works by this author on:GJ SlusserGJ Slusser1Mr. Banke, Dr. Varahramyan, and Dr. Slusser areengineers/scientistsatIBM Corporation,Essex Junction, VT 05452.Search for other works by this author on:
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Mapping Silicon Wafers by Spreading ResistanceByRG MazurRG Mazur1Mr. Mazur isPresidentofSolid State Measurements, Inc.,110 Technology Drive, Pittsburgh, PA 15275.Search for other works by this author on:
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Production Monitoring of 200MM Wafer ProcessingByWA Keenan,WA Keenan1The authors are with the Resistivity Product Group,Prometrix Corporation,3255 Scott Blvd., Bldg. 2 Santa Clara, CA 95054.Search for other works by this author on:WH Johnson,WH Johnson1The authors are with the Resistivity Product Group,Prometrix Corporation,3255 Scott Blvd., Bldg. 2 Santa Clara, CA 95054.Search for other works by this author on:AK SmithAK Smith1The authors are with the Resistivity Product Group,Prometrix Corporation,3255 Scott Blvd., Bldg. 2 Santa Clara, CA 95054.Search for other works by this author on:
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Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon WafersByT Shiraiwa,T Shiraiwa1Shiraiwa isresearch scientistsatOsaka Titanium Co.,Hyogo,; Ochiai and Sano areJapanresearch scientistsatKyushu Electric Metal Co.,Saga,; Tada and Arai areJapanresearch scientistsatRigaku Industrial Co.,Takatsuki, Osaka,.JapanSearch for other works by this author on:T Ochiai,T Ochiai1Shiraiwa isresearch scientistsatOsaka Titanium Co.,Hyogo,; Ochiai and Sano areJapanresearch scientistsatKyushu Electric Metal Co.,Saga,; Tada and Arai areJapanresearch scientistsatRigaku Industrial Co.,Takatsuki, Osaka,.JapanSearch for other works by this author on:M Sano,M Sano1Shiraiwa isresearch scientistsatOsaka Titanium Co.,Hyogo,; Ochiai and Sano areJapanresearch scientistsatKyushu Electric Metal Co.,Saga,; Tada and Arai areJapanresearch scientistsatRigaku Industrial Co.,Takatsuki, Osaka,.JapanSearch for other works by this author on:Y Tada,Y Tada1Shiraiwa isresearch scientistsatOsaka Titanium Co.,Hyogo,; Ochiai and Sano areJapanresearch scientistsatKyushu Electric Metal Co.,Saga,; Tada and Arai areJapanresearch scientistsatRigaku Industrial Co.,Takatsuki, Osaka,.JapanSearch for other works by this author on:T AraiT Arai1Shiraiwa isresearch scientistsatOsaka Titanium Co.,Hyogo,; Ochiai and Sano areJapanresearch scientistsatKyushu Electric Metal Co.,Saga,; Tada and Arai areJapanresearch scientistsatRigaku Industrial Co.,Takatsuki, Osaka,.JapanSearch for other works by this author on:
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Qualification of GaAs and AlGaAs by Optical and Surface Analysis TechniquesByJF Black,JF Black1The authors aremembers of the research staffofUnited Technologies Research Center,Silver Lane, East Hartford, CT 06108.Search for other works by this author on:JM Berak,JM Berak1The authors aremembers of the research staffofUnited Technologies Research Center,Silver Lane, East Hartford, CT 06108.Search for other works by this author on:GG PetersonGG Peterson1The authors aremembers of the research staffofUnited Technologies Research Center,Silver Lane, East Hartford, CT 06108.Search for other works by this author on:
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Wafer Fab Automation, an Integral Part of the CAM EnvironmentByCA Fiorletta,CA Fiorletta1Dr. James G. Harper is theVice President and General Manager, Carl A. Fiorletta isVice President and Product ManageratVeeco Integrated Automation (VIA),10480 Markison Road, Dallas, Texas 75238. Mr. Roger Lennard is theMarketing ManagerforVeeco Instruments Ltd,.United KingdomSearch for other works by this author on:R Lennard,R Lennard1Dr. James G. Harper is theVice President and General Manager, Carl A. Fiorletta isVice President and Product ManageratVeeco Integrated Automation (VIA),10480 Markison Road, Dallas, Texas 75238. Mr. Roger Lennard is theMarketing ManagerforVeeco Instruments Ltd,.United KingdomSearch for other works by this author on:JG HarperJG Harper1Dr. James G. Harper is theVice President and General Manager, Carl A. Fiorletta isVice President and Product ManageratVeeco Integrated Automation (VIA),10480 Markison Road, Dallas, Texas 75238. Mr. Roger Lennard is theMarketing ManagerforVeeco Instruments Ltd,.United KingdomSearch for other works by this author on:
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Computer Integrated Manufacturing: The Realities and Hidden Costs of AutomationByMS LigetiMS Ligeti1Maria S. Ligeti is thePresident and CEOofQronos Technology, Inc.,19925 Stevens Creek Blvd., Cupertino, CA 95014.Search for other works by this author on:
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Industry Considerations in Determining Equipment ReliabilityByJC GreinerJC Greiner1Jerry Greiner is asenior project engineeratMotorola Inc.,5005 E. McDowell, Phoenix, Az 85008, andCo-chairmanof theSEMI Equipment Automation and Interface Subcommittee.Search for other works by this author on:
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