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ASTM Selected Technical Papers
Semiconductor Processing
By
DC Gupta
DC Gupta
1
Siliconix Inc.
,
Symposium Chairman and Editor
Search for other works by this author on:
ISBN-10:
0-8031-0403-0
ISBN:
978-0-8031-0403-7
No. of Pages:
686
Publisher:
ASTM International
Publication date:
1984

Neutron irradiation at a flux of 5 × 1011 neutrons /cm2 sec for 18 hr has been performed on n-type GaAs with 5.9 × 10−2Ω-cm (n= 2.1 × 1016/cm3). In annealing experiments for electrical properties, it is found that neutron irradiated-induced damages are removed by the annealing temperature at 800°C. The recovery of radiation damage is also confirmed from the improvement of photoluminescence for GaAs annealed at 800°C. The magnitude of the average displacement damage introduced during neutron irradiation is estimated to be 0.15 A by the measurement of Rutherford Backscattering channeling.

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Janus
,
H. M.
and
Malmros
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”,
IEEE Trans Electron Devices
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,
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, and
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, “
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”,
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, Vol.
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,
02
1979
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,
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,
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,
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,
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, and
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, “
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”,
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,
06
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Schneider
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”,
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, No.
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,
1982
, pp. 285-286.
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Vesaghi
,
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, “
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”,
Phys. Rev.
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B25
, No.
8
,
04
1982
, pp. 5436-5450.
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Williams
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and
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, “
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”,
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, No.
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,
09
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Stoelinga
,
J. H.
,
Larsen
,
David M.
,
Walukiewicz
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, and
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, “
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”,
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,
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8.
Kuriyama
,
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,
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,
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,
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,
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,
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, and
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,
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, “
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”,
J. Appl. Phys.
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, No.
2
,
02
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, pp. 673-676.
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