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ASTM Selected Technical Papers
Semiconductor Processing
By
DC Gupta
DC Gupta
1
Siliconix Inc.
,
Symposium Chairman and Editor
Search for other works by this author on:
ISBN-10:
0-8031-0403-0
ISBN:
978-0-8031-0403-7
No. of Pages:
686
Publisher:
ASTM International
Publication date:
1984

The developments necessary to implement a comprehensive research programme aimed at understanding dopant incorporation in silicon are described. The two experimental techniques used, and possessing the required dynamic range and depth resolution, are high resolution Spreading Resistance and Secondary Ion Mass Spectrometry. Comparative studies of samples with both techniques lead to a greater understanding of dopant incorporation and dopant activation and provide a wealth of data for the refinement of process models such as SUPREM.

Data are presented on a number of different samples, including boron and arsenic implantations and anneals (furnace, and electron beam) in silicon and in silicon-on-sapphire.

1.
Antoniadis
,
D. A.
,
Hansen
,
S. E.
, and
Dutton
,
R. W.
, “
SUPREM II -A Programme for IC Modelling and Simulation
”. SEL78-020 
Standford Electronics Laboratories, Standford University
,
06
1978
.
2.
Maes
,
H.
,
Vandervorst
,
W.
, and
Van Overstraeten
,
R.
, “
Impurity Profile of Implanted Ions in Silicon
”, in
Impurity Doping Processes in Silicon
,
Wang
F. F. Y.
, Ed.,
North Holland
,
1981
, pp. 443-638.
3.
Ehrstein
,
J. R.
,
Downing
,
R. G.
,
Stallard
,
B. R.
,
Simons
,
D. S.
, and
Fleming
,
R. F.
, “
Comparison of Depth Profiling of 10Boron in Silicon using SRP, SIMS and NDP Techniques
”, in
Semiconductor Processing
, ASTM STP 850,
Gupta
Dinesh C
, Ed.,
American Society for Testing and Materials
,
1984
.
4.
Godfrey
,
D. J.
,
Groves
,
R. D.
,
Willoughby
,
A. F.
, and
Dowsett
,
M. G.
, “
Measurements and Modelling of the Diffusion of Ion Implanted Boron in Silicon
”, presented at the
13th European Solid State Device Research Conference
,
University of Kent
,
UK
, 13–16 September 1983.
5.
Yallup
,
K. J.
, “
Some More Aspects of Arsenic and Boron Process Modelling
”,
Proceedings of the 4th Presentation of Semiconductor 1983 International
,
Birmingham, UK
, 27–29 September 1983.
6.
Godfrey
,
D. J.
,
McMahon
,
R. A.
,
Ahmed
,
H.
and
Dowsett
,
M. G.
, “
Highly Controlled Diffusion of Ion Implanted Arsenic by Multiple Scan Electron Beam Heating
”,
Proceedings of the First European Meeting on Laser-Solid Interactions — Transient Thermal Processing of Materials
,
Strasbourg, France
, 25–29th May 1983.
7.
Pawlik
,
M.
, and
Groves
,
R. D.
, “
Dopant Profiling in Silicon On Sapphire Using Spreading Resistance
”,
Applied Physics Letters
 0003-6951, To be published.
8.
Ehrstein
,
J. R.
, “
Two Probe (Spreading Resistance) Measurements for Evaluation of Semiconductor Materials and Devices
”, in
Nondestructive Evaluation of Semiconductor Materials and Devices
,
Zemel
J. N.
, Ed.
Plenum Press
,
New York
,
1979
, pp. 1-66
9.
Pawlik
,
M.
, and
Groves
,
R. D.
, “
Development of Spreading Resistance Techniques for Shallow Dopant Profiling
”, Recent News Paper
862 RNP
,
163rd Meeting of the Electrochemical Society
,
05
1983
,
San Francisco
10.
Tong
,
A. H.
,
Gorey
,
E. F.
, and
Schneider
,
C. P.
, “
Apparatus for the Measurement of Small Angles
”,
Review of Scientific Instruments
 0034-6748, Vol.
43
, No.
2
,
1970
, pp. 320-323.
11.
Mazur
,
R. G.
, and
Gruber
,
G. A.
, “
Dopant Profiles on Thin Layer Silicon Substrates with the Spreading Resistance Techniques
”,
Solid State Technology
 0038-111X, Vol.
24
, No.
1
,
1981
, pp. 64-70.
12.
American Society for Testing and Materials
, “
Standard Practice for the Conversion between Resistivity and Dopant Density for Boron Doped and Phosphorus Doped Silicon
”, F723-82.
13.
Dowsett
,
M. G.
, and
Parker
,
E. H. C.
, “
EVA2000 -A Computer Controlled SIMS System for Quantiative Analysis of Semiconductor Materials
” Presented at the
International Conference on Quantitative Surface Analysis
,
National Physical Laboratory
,
Teddington, Meddlesex, UK
, 24–25 November 1981.
14.
Honig
,
R. E.
, “
Surface and Thin Film Analysis of Semiconductor Materials
”, in
Characterisataion of Epitaxial Semiconductor Films
,
Kressel
H. K.
, Ed.,
Elsevier
,
Amsterdam
,
1976
, pp. 89-121.
15.
Mole.
P. J.
,
Edwards
,
S. P.
and
Dowsett
,
M. G.
. “
The Investigation of Boron Diffusion at 900°C in SOS Films using SIMS Techniques
”,
1983 IEEE SOS/SOI Technology Workshop
,
Wyoming
, October 4–6.
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