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ASTM Selected Technical Papers
Silicon Processing
By
DC Gupta
DC Gupta
1
Siliconix Incorporated
,
Santa Clara, California
;
symposium chairman and editor
Search for other works by this author on:
ISBN-10:
0-8031-0243-7
ISBN:
978-0-8031-0243-9
No. of Pages:
571
Publisher:
ASTM International
Publication date:
1983

Key parameters and process tradeoffs in improving resist profile quality and linewidth control are explored for optical projection printing. Simulation with program SAMPLE is used to study the impact of image quality, wafer topography, and resist characteristics in the context of the complete lithographic process. The advantages of the use of a bias and of a “surface induction” resist are illustrated. The tradeoff between quality and throughput is explored as a function of the partial coherence factor. Practical rules of thumb are given for performance with single-layer thick resists. The potential improvements with multilayer and inorganic resists are also discussed.

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,
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,
04
1979
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2.
O'Toole
,
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, “
Simulation of Optically Formed Image Profiles in Positive Photoresist
,” Ph.D. thesis,
University of California
, Berkeley,
06
1979
.
3.
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,
A. R.
,
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, and
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W. G.
,
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275
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, “
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,”
Kodak Microelectronics Seminar Proceedings
,
1979
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,
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,
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,
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,
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12.
Neureuther
,
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,
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,
D. C.
, and
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, “
Characterization of Mid-UV Resist: Models and Simulation
,” presented at
Electronics Materials Conference
,
Santa Barbara, Calif.
, 24–26 June 1981.
13.
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,
D. C.
,
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,
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,
Neureuther
,
A. R.
, and
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,
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, “
Characterization of the ‘Induction Effect’ at Mid-UV Exposure: Application to AZ2400 at 313 nm
,”
SPIE
, Vol.
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, Optical Microlithography, Paper 26,
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,
SPIE
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15.
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,
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,
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,
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,
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,
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, and
Ting
,
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,”
SPIE
, Vol.
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03
1982
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16.
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,
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,
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,
Lamberti
,
V. E.
, and
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,
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, Vol.
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, No.
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17.
Lin
,
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and
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,
IEEE Transactions on Electron Devices
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,
11
1981
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18.
O'Toole
,
M. M.
,
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,
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, and
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,
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,
IEEE Transactions on Electron Devices
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, No.
11
,
11
1981
, pp. 1405-1410.
19.
Shaw
,
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and
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,
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,
IEEE Transactions on Electron Devices
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, No.
4
,
04
1978
, pp. 425-430.
20.
Kyser
,
D. F.
and
Pyle
,
R.
,
IBM Journal of Research and Development
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24
, No.
4
,
07
1980
, pp. 426-437.
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