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ASTM Selected Technical Papers
Lifetime Factors in Silicon
By
RD Westbrook
RD Westbrook
1
Oak Ridge National Laboratory
,
Oak Ridge, Tenn. 37830
;
symposium chairman
.
Search for other works by this author on:
ISBN-10:
0-8031-0390-5
ISBN:
978-0-8031-0390-0
No. of Pages:
258
Publisher:
ASTM International
Publication date:
1980

A measurement technique in which inhomogeneities in lifetime or resistivity or both in large-area semiconductor p-n devices can be visualized, is described. The method utilizes a light spot that is scanned across the device area. By using a double-pass method in which the beam is scanned twice for two different bias voltages, the influence of the surface is eliminated. Absolute values of minority carrier diffusion lengths can be obtained by using a red (0.63-μm) and an infrared (1.15-μm) heliumneon laser in combination. Illuminating the specimen with light of 0.63-μm wavelength and measuring the photocurrent as a function of the space charge region width yields the diffusion length for holes in the n region. Using light of 1.15-μm wavelength in the same type of measurement yields the diffusion length of electrons in the p+ region.

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,
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,
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 0038-111X,
02
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,
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 0013-5070,
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,
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de Kock
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, p. 301.
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, Vol.
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,
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16.
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, Jr.
,
Journal of Applied Physics
 0021-8979, Vol.
43
,
1972
, p. 1649.
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