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ASTM Selected Technical Papers
Semiconductor Measurement Technology: Spreading Resistance Symposium
By
James R. Ehrstein
James R. Ehrstein
Editor
1Electronic Technology Division, Institute for Applied Technology,
National Bureau of Standards
, Washington, D.C., 20234
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ISBN-10:
0-8031-6661-3
ISBN:
978-0-8031-6661-5
No. of Pages:
297
Publisher:
ASTM International
Publication date:
1974
Ehrstein, JR.
Semiconductor Measurement Technology: Spreading Resistance Symposium. ISBN-10: 0-8031-6661-3
ISBN: 978-0-8031-6661-5
No. of Pages: 297
ISBN (electronic): 978-0-8031-6938-8
Publisher: ASTM International
Published: 1974
Download citation file:
Table of Contents
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Welcoming Remarks at the ASTM/NBS Symposium on Spreading Resistance Measurements Gaithersburg, Maryland June 13, 1974ByJudson C. FrenchJudson C. FrenchChief1Electronic Technology DivisionNational Bureau of StandardsSearch for other works by this author on:
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Welcoming Remarks from ASTMByRobert I. ScaceRobert I. Scace1General Electric CompanySyracuse, New YorkSearch for other works by this author on:
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Keynote Address Symposium on Spreading Resistance Gaithersburg, Maryland June 13–14, 1974ByRobert G. MazurRobert G. Mazur1Solid State Measurements, Inc.600 Seco Road Monroeville, Pennsylvania 15146Search for other works by this author on:
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The Physics of Spreading Resistance MeasurementsByStephen J. FonashStephen J. Fonash1Engineering Science DepartmentPennsylvania State University,University Park, Pennsylvania 16802Search for other works by this author on:
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Formal Comparison of Correction Formulae for Spreading Resistance Measurements on Layered StructuresByP. J. SeverinP. J. Severin1Philips Research LaboratoriesEindhoven,The NetherlandsSearch for other works by this author on:
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Two-Point Probe Correction FactorsByD. H. DickeyD. H. Dickey1Bell and Howell Research LaboratoryPasadena, CaliforniaSearch for other works by this author on:
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On the Validity of Correction Factors applied to Spreading Resistance Measurements on Bevelled StructuresByP. M. PinchonP. M. Pinchon1R.T.C La Radiotechnique CompelecRoute de la DélivrandeB.P. 6025 -14 CaenFranceSearch for other works by this author on:
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SRPROF, A Fast and Simple Program for Analyzing Spreading Resistance Profile DataByB. L. Morris,B. L. Morris1Bell Telephone Laboratories, IncorporatedAllentown, PennsylvaniaSearch for other works by this author on:J. C. White, Jr.J. C. White, Jr.2Western Electric CompanyAllentown, PennsylvaniaSearch for other works by this author on:
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Multilayer Analysis of Spreading Resistance MeasurementsByGregg A. LeeGregg A. Lee1Texas Instruments IncorporatedDallas, Texas 75222Search for other works by this author on:
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An Automated Spreading Resistance Test FacilityByJames C. White, Jr.James C. White, Jr.1Western Electric Co., Inc.555 Union Blvd. Allentown, Pa. 18103Search for other works by this author on:
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Angle-Bevelling Silicon Epitaxial Layers, Technique and EvaluationByP. J. SeverinP. J. Severin1Philips Research LaboratoriesEindhoven,NetherlandsSearch for other works by this author on:
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Spreading Resistance Measurements on Silicon with Non-blocking Aluminum-Silicon ContactsByJ. KrausseJ. Krausse1Siemens AG, UB B GE 18 München 46, Frankfurter Ring 152F.R. GermanySearch for other works by this author on:
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The Preparation of Bevelled Surfaces for Spreading Resistance Probing by Diamond Grinding and Laser Measurement of Bevel AnglesByA. Mayer,A. Mayer1RCA Solid State DivisionSomerville, N.J.Search for other works by this author on:S. ShwartzmanS. Shwartzman1RCA Solid State DivisionSomerville, N.J.Search for other works by this author on:
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Spreading Resistance Correction Factors for (111) and (100) SurfacesByH. Murrmann,H. Murrmann1Siemens AG,Werk Halbleiter Munich,GermanySearch for other works by this author on:F. SedlakF. Sedlak1Siemens AG,Werk Halbleiter Munich,GermanySearch for other works by this author on:
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On the Calibration and Performance of a Spreading Resistance ProbeByH. J. Ruiz,H. J. Ruiz1Texas Instruments Incorporated,Dallas, Texas 75222Search for other works by this author on:F. W. VoltmerF. W. Voltmer1Texas Instruments Incorporated,Dallas, Texas 75222Search for other works by this author on:
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Comparison of the Spreading Resistance Probe with other Silicon Characterization TechniquesByWalter H. Schroen,Walter H. Schroen1Semiconductor Research and Development Laboratories,Texas Instruments IncorporatedDallas, Texas 75222Search for other works by this author on:Gregg A. Lee,Gregg A. Lee1Semiconductor Research and Development Laboratories,Texas Instruments IncorporatedDallas, Texas 75222Search for other works by this author on:Fred W. VoltmerFred W. Voltmer1Semiconductor Research and Development Laboratories,Texas Instruments IncorporatedDallas, Texas 75222Search for other works by this author on:
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Preparation of a Lightly Loaded, Close-Spaced Spreading Resistance Probe and its Application to the Measurement of Doping Profiles in SiliconByJ. L. Deines,J. L. Deines1IBM System Products Division,East Fishkill Facility,Hopewell Junction, New York 12533Search for other works by this author on:E. F. Gorey,E. F. Gorey1IBM System Products Division,East Fishkill Facility,Hopewell Junction, New York 12533Search for other works by this author on:A. E. Michel,A. E. Michel1IBM System Products Division,East Fishkill Facility,Hopewell Junction, New York 12533Search for other works by this author on:M. R. PoponiakM. R. Poponiak1IBM System Products Division,East Fishkill Facility,Hopewell Junction, New York 12533Search for other works by this author on:
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A Direct Comparison of Spreading Resistance and MOS-CV Measurements of Radial Resistivity Inhomogeneities on PICTUREPHONE® WafersByJ. R. Edwards,J. R. Edwards1Bell Laboratories,555 Union Boulevard, Allentown, Pa. 18103Search for other works by this author on:H. E. NighH. E. Nigh1Bell Laboratories,555 Union Boulevard, Allentown, Pa. 18103Search for other works by this author on:
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Investigations on Local Oxygen Distribution in Silicon Single Crystals by Means of Spreading Resistance TechniqueByFritz G. Vieweg-GutberletFritz G. Vieweg-Gutberlet1Wacker-Chemitronic GmbH.Physical LaboratoryD-8263 Burghausen,West GermanySearch for other works by this author on:
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Use of the Spreading Resistance Probe for the Characterization of Microsegregation in Silicon CrystalsByF. W. Voltmer,F. W. Voltmer1Texas Instruments IncorporatedDallas, Texas 75222Search for other works by this author on:H. J. RuizH. J. Ruiz1Texas Instruments IncorporatedDallas, Texas 75222Search for other works by this author on:
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Effects of Oxygen and Gold on Silicon Power DevicesByJacques AssourJacques Assour1RCA Solid State Division Somerville,New Jersey 08876Search for other works by this author on:
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The Evaluation of Thin Silicon Layers by Spreading Resistance MeasurementsByGilbert A. Gruber,Gilbert A. Gruber1Solid State Measurements, Inc.,Monroeville, Pennsylvania 15146Search for other works by this author on:Robert F. PfeiferRobert F. Pfeifer2NCR Microelectronics Division,Miamisburg, Ohio 45342Search for other works by this author on:
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Evaluation of the Effective Epilayer Thickness by Spreading Resistance MeasurementByH. Murrmann,H. Murrmann1Siemens AG,Werk Halbleiter Munich,GermanySearch for other works by this author on:F. SedlakF. Sedlak1Siemens AG,Werk Halbleiter Munich,GermanySearch for other works by this author on:
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The Experimental Investigation of Two-Point Spreading Resistance Correction Factors for Diffused LayersByN. Goldsmith,N. Goldsmith1RCA Laboratories Princeton,New Jersey 08540Search for other works by this author on:R. V. D'Aiello,R. V. D'Aiello1RCA Laboratories Princeton,New Jersey 08540Search for other works by this author on:R. A. SunshineR. A. Sunshine1RCA Laboratories Princeton,New Jersey 08540Search for other works by this author on:
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Application of the Spreading Resistance Technique to Silicon Characterization for Process and Device ModelingByWalter H. SchroenWalter H. Schroen1Semiconductor Research and Development Laboratories,Texas Instruments Incorporated,Dallas, Texas 75222Search for other works by this author on:
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Improved Surface Preparation For Spreading Resistance Measurements on p-type SiliconByJ. R. EhrsteinJ. R. Ehrstein1Institute for Applied Technology,National Bureau of Standards,Washington, D.C. 20234Search for other works by this author on:
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© 1974
ASTM International
