A thin one-dimensional rectangular or two-dimensional axisymmetric film is clamped at the perimeter. An electrostatic potential (V0*) applied to a pad directly underneath the film leads to a “pull-in” phenomenon. The electromagnetic energy stored in the capacitive film-pad dielectric gap is decoupled from the mechanical deformation of the film using the Dugdale-Barenblatt-Maugis cohesive zone approximation. The ratio of film-pad gap (g) to film thickness (h), or, γ=gh, is found to play a crucial role in the electromechanical behavior of the film. Solution spanning a wide range of γ is found such that V0*γ32 for γ<0.5 and V0*γ52 for γ>5. The new model leads to new design criteria for MEMS-RF-switches.

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