To optimize chemical mechanical polishing CMP process, one needs to get information on the interaction between the abrasive slurry particles and the surface being polished. To study such interactions, we used atomic force microscopy (AFM). An AFM tip was used to mimic a single abrasive silica particle typical of those used in CMP slurry. Studying copper CMP, we found that the AFM scanning removes the surface oxide layer in different rates depending on the depth of removal and the pH of the solution. Oxide removal happens considerably faster than the CMP copper removal. This is in agreement with generally accepted models of copper CMP. Both long-range and the friction forces acting between the AFM tip and surface during the polishing process were measured. The correlation between those forces and the removal rate is discussed.
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World Tribology Congress III
September 12–16, 2005
Washington, D.C., USA
Conference Sponsors:
- Tribology Division
ISBN:
0-7918-4202-9
PROCEEDINGS PAPER
Copper CMP Mimicked With Atomic Force Microscopy Available to Purchase
Igor Sokolov
Igor Sokolov
Clarkson University, Potsdam, NY
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Igor Sokolov
Clarkson University, Potsdam, NY
Paper No:
WTC2005-64018, pp. 471-472; 2 pages
Published Online:
November 17, 2008
Citation
Sokolov, I. "Copper CMP Mimicked With Atomic Force Microscopy." Proceedings of the World Tribology Congress III. World Tribology Congress III, Volume 2. Washington, D.C., USA. September 12–16, 2005. pp. 471-472. ASME. https://doi.org/10.1115/WTC2005-64018
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