Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.
Skip Nav Destination
Sign In or Register for Account
World Tribology Congress III
September 12–16, 2005
Washington, D.C., USA
Conference Sponsors:
- Tribology Division
ISBN:
0-7918-4201-0
PROCEEDINGS PAPER
A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing
Yeau-Ren Jeng
,
Yeau-Ren Jeng
National Chung Cheng University, Ming-Hsiung, Chia-Yi, Taiwan
Search for other works by this author on:
Pay-Yau Huang
Pay-Yau Huang
National Chung Cheng University, Ming-Hsiung, Chia-Yi, Taiwan
Search for other works by this author on:
Yeau-Ren Jeng
National Chung Cheng University, Ming-Hsiung, Chia-Yi, Taiwan
Pay-Yau Huang
National Chung Cheng University, Ming-Hsiung, Chia-Yi, Taiwan
Paper No:
WTC2005-63260, pp. 239-240; 2 pages
Published Online:
November 17, 2008
Citation
Jeng, Y, & Huang, P. "A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing." Proceedings of the World Tribology Congress III. World Tribology Congress III, Volume 1. Washington, D.C., USA. September 12–16, 2005. pp. 239-240. ASME. https://doi.org/10.1115/WTC2005-63260
Download citation file:
Sign In
9
Views
0
Citations
Related Proceedings Papers
Related Articles
A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing
J. Tribol (January,2005)
A Particle-Augmented Mixed Lubrication Modeling Approach to Predicting Chemical Mechanical Polishing
J. Tribol (January,2009)
Elastic Singularity Interacting With Various Types of Interfaces
J. Appl. Mech (May,2003)
Related Chapters
Effective Innovation—Benefits
Effective Innovation: The Development of Winning Technologies
Going from Raw Emotions to a Polished Commercial Offering; the New Product Introduction Process
Engineer Entrepreneur
Automated Robotic Polishing Using a Direct Teaching and Playback Method
Proceedings of the 2010 International Conference on Mechanical, Industrial, and Manufacturing Technologies (MIMT 2010)