A poled PZT wafer is subject to electric field loading of pulse type whose magnitude is increasing and then decreasing during a complete cycle of polarization reversal at four room and high temperatures. The PZT wafer is also subject to pure temperature increase from 20 to 110 Celsius degree at various initial states. During the two experiments, electric displacement and in-plane strain are measured. From the measured data, piezoelectric coefficient, permittivity, pyroelectric coefficient, and thermal expansion coefficient are evaluated and their distribution over remnant polarization and temperature is discussed. The dependency of linear moduli on temperature and remnant polarization is used to calculate reference remnant polarization and reference remnant in-plane strain responses to cyclic electric field loading at four different temperatures.
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Evolution of Linear Moduli and Nonlinear Responses of a PZT Wafer Under Electric Field at Room and High Temperatures
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Lee, N, Ji, DW, Kim, S, & Kim, YS. "Evolution of Linear Moduli and Nonlinear Responses of a PZT Wafer Under Electric Field at Room and High Temperatures." Proceedings of the ASME 2012 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. Volume 2: Mechanics and Behavior of Active Materials; Integrated System Design and Implementation; Bio-Inspired Materials and Systems; Energy Harvesting. Stone Mountain, Georgia, USA. September 19–21, 2012. pp. 125-131. ASME. https://doi.org/10.1115/SMASIS2012-8012
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