A method to characterize the strain electric field butterfly behavior based on the underlying domain switching mechanism is presented at first. The effect of loading rate on the different characteristics of the strain electric-field-butterfly behavior is then studied. By comparing the changes in these characteristics under different loading rates, it is established that the loading rate dependence of the strain electric field butterfly behavior is mainly due to two factors, 1) the dependence of the switching of individual domains on the magnitude and duration of the loading time and 2) the variation of the transition electric field with the loading rate. Several interesting attributes of the domain switching behavior that may shed light on understanding the underlying mechanism of domain switching further is illustrated in the present study. The present study also demonstrates that the method of characterizing the strain electric butterfly based on the underlying domain switching mechanism is very effective in studying ferroelectric behavior under different loading conditions.
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ASME 2008 Conference on Smart Materials, Adaptive Structures and Intelligent Systems
October 28–30, 2008
Ellicott City, Maryland, USA
Conference Sponsors:
- Aerospace Division
ISBN:
978-0-7918-4331-4
PROCEEDINGS PAPER
Loading Rate Effect on the Domain Switching of Ferroelectric Materials Available to Purchase
Ajit Achuthan,
Ajit Achuthan
GE Research Center, Niskayuna, NY
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Chin-Teh Sun
Chin-Teh Sun
Purdue University, West Lafayette, IN
Search for other works by this author on:
Ajit Achuthan
GE Research Center, Niskayuna, NY
Chin-Teh Sun
Purdue University, West Lafayette, IN
Paper No:
SMASIS2008-582, pp. 539-547; 9 pages
Published Online:
July 13, 2009
Citation
Achuthan, A, & Sun, C. "Loading Rate Effect on the Domain Switching of Ferroelectric Materials." Proceedings of the ASME 2008 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. Smart Materials, Adaptive Structures and Intelligent Systems, Volume 1. Ellicott City, Maryland, USA. October 28–30, 2008. pp. 539-547. ASME. https://doi.org/10.1115/SMASIS2008-582
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