The SiC ceramic ductile grinding, which can obtain crack-free ground surface, is a challenge in brittle material machining. To understand the brittle material ductile grinding mechanism in the nanoscale, a molecular dynamics (MD) model is built to study the single diamond grit grinding silicon carbide ceramic. Through analyzing the MD simulation process, the grit forces the SiC to deform and form the chip through the plastic deformation and flow. The ground surface has no crack on the surface and damage layer thickness is less than one atom layer under the nanoscale depth of cut, which indicates the nanogrinding can achieve the pure ductile grinding for the SiC ceramic and obtain a crack-free and high-quality ground surface. Grinding force, stress, temperature, and specific energy increase with the wheel speed and depth of cut due to the higher grinding speed and a smaller depth of cut can generate a higher density of defects (vacancies, interstitial atoms, and dislocations) on the workpiece, which can make the silicon carbide ceramic more ductile. The high wheel speed is favorable for the ductile grinding.

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