Transparent and conductive alumina-doped ZnO (AZO) films were deposited on sapphire substrates at room temperature by room temperature pulsed laser deposition (PLD) and then followed by laser crystallization at 500K. As implied by the Multiphysics Simulation, X-ray diffraction spectra and morphological characterizations show grain growth and crystallinity enhancement during the crystallization process, resulting in less film internal imperfections. With lower internal defects, higher conductivity and transmittance were expected. Electrical and optical measurements show that the crystallization process dramatically improves the electron mobility and conductivity while the carrier concentration decreases, which in turn increases infrared transmittance. Under an optimal laser crystallization condition, AZO films with low resistivity of 9.90×10−4 Ω-cm and a high electron mobility of 79 cm2/Vs. UV-Vis-IR transmittance spectrum shows the laser crystallization significantly enhanced the AZO film transparency to 6000nm with over 60% transmittance. And the crystallized AZO film shows 36% higher transmittance than room temperature PLD deposited AZO film over 900–5000nm wavelength range.
Skip Nav Destination
ASME 2014 International Manufacturing Science and Engineering Conference collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference
June 9–13, 2014
Detroit, Michigan, USA
Conference Sponsors:
- Manufacturing Engineering Division
ISBN:
978-0-7918-4581-3
PROCEEDINGS PAPER
Laser Crystallization of Transparent AZO Films on Sapphire With High Electron Mobility for Photo-Application Available to Purchase
Qiong Nian,
Qiong Nian
Purdue University, West Lafayette, IN
Search for other works by this author on:
Martin Y. Zhang,
Martin Y. Zhang
Purdue University, West Lafayette, IN
Search for other works by this author on:
Bradley D. Schwartz,
Bradley D. Schwartz
Goodrich Corporation, Danbury, CT
Search for other works by this author on:
Gary J. Cheng
Gary J. Cheng
Purdue University, West Lafayette, IN
Search for other works by this author on:
Qiong Nian
Purdue University, West Lafayette, IN
Martin Y. Zhang
Purdue University, West Lafayette, IN
Bradley D. Schwartz
Goodrich Corporation, Danbury, CT
Gary J. Cheng
Purdue University, West Lafayette, IN
Paper No:
MSEC2014-4051, V002T02A093; 10 pages
Published Online:
October 3, 2014
Citation
Nian, Q, Zhang, MY, Schwartz, BD, & Cheng, GJ. "Laser Crystallization of Transparent AZO Films on Sapphire With High Electron Mobility for Photo-Application." Proceedings of the ASME 2014 International Manufacturing Science and Engineering Conference collocated with the JSME 2014 International Conference on Materials and Processing and the 42nd North American Manufacturing Research Conference. Volume 2: Processing. Detroit, Michigan, USA. June 9–13, 2014. V002T02A093. ASME. https://doi.org/10.1115/MSEC2014-4051
Download citation file:
9
Views
Related Proceedings Papers
Related Articles
Study of Fluorine-Doped Ti O 2 Sol-Gel Thin Coatings
J. Sol. Energy Eng (November,2008)
Effect of Rate on Pulsed Laser Deposition of Yttria-Stabilized Zirconia Electrolyte Thin Films for SOFCs
J. Fuel Cell Sci. Technol (June,2015)
Related Chapters
Energy Balance for a Swimming Pool
Electromagnetic Waves and Heat Transfer: Sensitivites to Governing Variables in Everyday Life
PVDF/CO 3 O 4 Nanocomposites: Porosity, Crystallinity and Conductivity
International Conference on Advanced Computer Theory and Engineering, 4th (ICACTE 2011)
Glossary of Terms
Consensus on Operating Practices for Control of Water and Steam Chemistry in Combined Cycle and Cogeneration