Silicon wafers are the most widely used substrates for fabricating integrated circuits. A sequence of processes is needed to turn a silicon ingot into silicon wafers. One of the processes is flattening by lapping or by grinding to achieve a high degree of flatness and parallelism of the wafer [1, 2, 3]. Lapping can effectively remove or reduce the waviness induced by preceding operations [2, 4]. The main aim of this paper is to compare the simulation results with lapping experimental data obtained from the Polish producer of silicon wafers, the company Cemat Silicon from Warsaw (www.cematsil.com). Proposed model is going to be implemented by this company for the tool wear prediction. Proposed model can be applied for lapping or grinding with single or double-disc lapping kinematics [5, 6, 7]. Geometrical and kinematical relations with the simulations are presented in the work. Generated results for given workpiece diameter and for different kinematical parameters are studied using models programmed in the Matlab environment.
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ASME 2010 International Manufacturing Science and Engineering Conference
October 12–15, 2010
Erie, Pennsylvania, USA
Conference Sponsors:
- Manufacturing Engineering Division
ISBN:
978-0-7918-4946-0
PROCEEDINGS PAPER
Wear of a Tool in Double-Disk Lapping of Silicon Wafers
Adam Barylski,
Adam Barylski
Gdansk University of Technology, Gdansk, Poland
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Mariusz Deja
Mariusz Deja
Gdansk University of Technology, Gdansk, Poland
Search for other works by this author on:
Adam Barylski
Gdansk University of Technology, Gdansk, Poland
Mariusz Deja
Gdansk University of Technology, Gdansk, Poland
Paper No:
MSEC2010-34323, pp. 301-307; 7 pages
Published Online:
April 11, 2011
Citation
Barylski, A, & Deja, M. "Wear of a Tool in Double-Disk Lapping of Silicon Wafers." Proceedings of the ASME 2010 International Manufacturing Science and Engineering Conference. ASME 2010 International Manufacturing Science and Engineering Conference, Volume 1. Erie, Pennsylvania, USA. October 12–15, 2010. pp. 301-307. ASME. https://doi.org/10.1115/MSEC2010-34323
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