Delamination between sub-micron thick films is initiated at an interface edge due to creep deformation, and leads to the malfunction of microelectronic devices. In this study, the cohesive zone model approach with a cohesive law based on damage mechanics was developed to simulate crack initiation process at an interface edge between film layers under creep. Delamination experiments using a micro-cantilever bend specimen with a Sn/Si interface were conducted. The parameters charactering the cohesive law were calibrated by fitting displacement-time curves obtained by experiments and simulations. In addition, the order of the stress singularity, which increases with time and has a significant jump in its value at the crack initiation, was investigated.

This content is only available via PDF.
You do not currently have access to this content.