The temperature evolution prediction of silicon nanofilms and nanowires can be useful to safeguard high technology systems of its deterioration. The simulation of a level and a pulse in these nanostructures is then made with Boltzmann Transport Equation (BTE) resolution using the single time approximation. The Discrete Ordinate (DO) method helps to numerate the angle space. BTE is written in cylindrical coordinates which corresponds to wires. Therefore, the cylindrical plane is considered as an isotropic scattering to mimic a nanowire and then, as a specular reflexion (which conserve z momentum) to simulate a nanofilm. Using the axisymmetry done with a specular reflexion, the cylinder is two dimensionally discretized with a regular rectangular mesh.
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Heat Pulse Propagation in Silicon Nanostructures by Solving Phonon Transport Equation
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Terris, D, Joulain, K, & Lemonnier, D. "Heat Pulse Propagation in Silicon Nanostructures by Solving Phonon Transport Equation." Proceedings of the ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer, Parts A and B. Tainan, Taiwan. June 6–9, 2008. pp. 31-40. ASME. https://doi.org/10.1115/MNHT2008-52220
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