The successful exfoliation of atomically-thin bismuth telluride quintuple layer (QL) attracts tremendous interest in investigating the electron and phonon transport properties in this quasi-two-dimensional material. While experimental results show that thermal conductivity is significantly reduced in Bi2Te3 QL compared to the bulk phase, the underlying mechanisms for the reduction is still unclear. Also in some measurements, the Bi2Te3 QL is usually supported on the substrate and the effect of the substrate on heat transfer in Bi2Te3 QL is unknown. In this work, we have performed molecular dynamics simulations and normal mode analysis to study the mode-wise phonon properties in freestanding and supported Bi2Te3 QL. We found that the existing of substrate will decrease the phonon relaxation times in Bi2Te3 QL in the full frequency range. Thermal conductivity accumulation function for both freestanding and supported Bi2Te3 QL are constructed and compared. We found that half of heat transfer in freestanding Bi2Te3 QL contributed from phonons with mean free paths larger than 16.5 nm, while in supported Bi2Te3 QL this value is reduced to 11 nm. In both cases phonons with MFPs in the range of 10–30 nm are the dominate heat carriers, which contribute to 55% and 53% of thermal conductivity in freestanding and supported cases.
Skip Nav Destination
Close
Sign In or Register for Account
ASME 2016 5th International Conference on Micro/Nanoscale Heat and Mass Transfer
January 4–6, 2016
Biopolis, Singapore
Conference Sponsors:
- Heat Transfer Division
ISBN:
978-0-7918-4966-8
PROCEEDINGS PAPER
Mode-Resolved Thermal Conductivity of Freestanding and Supported Bismuth Telluride Quintuple Layer
Cheng Shao
,
Cheng Shao
University of Michigan-Shanghai Jiaotong University Joint Institute, Shanghai, China
Search for other works by this author on:
Hua Bao
Hua Bao
University of Michigan-Shanghai Jiaotong University Joint Institute, Shanghai, China
Search for other works by this author on:
Cheng Shao
University of Michigan-Shanghai Jiaotong University Joint Institute, Shanghai, China
Hua Bao
University of Michigan-Shanghai Jiaotong University Joint Institute, Shanghai, China
Paper No:
MNHMT2016-6467, V002T11A012; 8 pages
Published Online:
March 15, 2016
Citation
Shao, C, & Bao, H. "Mode-Resolved Thermal Conductivity of Freestanding and Supported Bismuth Telluride Quintuple Layer." Proceedings of the ASME 2016 5th International Conference on Micro/Nanoscale Heat and Mass Transfer. Volume 2: Micro/Nano-Thermal Manufacturing and Materials Processing; Boiling, Quenching and Condensation Heat Transfer on Engineered Surfaces; Computational Methods in Micro/Nanoscale Transport; Heat and Mass Transfer in Small Scale; Micro/Miniature Multi-Phase Devices; Biomedical Applications of Micro/Nanoscale Transport; Measurement Techniques and Thermophysical Properties in Micro/Nanoscale; Posters. Biopolis, Singapore. January 4–6, 2016. V002T11A012. ASME. https://doi.org/10.1115/MNHMT2016-6467
Download citation file:
- Ris (Zotero)
- Reference Manager
- EasyBib
- Bookends
- Mendeley
- Papers
- EndNote
- RefWorks
- BibTex
- ProCite
- Medlars
Close
Sign In
15
Views
0
Citations
Related Proceedings Papers
Related Articles
Electron and Phonon Thermal Conduction in Epitaxial High- T c Superconducting Films
J. Heat Transfer (February,1993)
Hierarchical
Modeling of Heat Transfer in Silicon-Based Electronic
Devices
J. Heat Transfer (October,2010)
Sub-Continuum Simulations of Heat Conduction in Silicon-on-Insulator Transistors
J. Heat Transfer (February,2001)
Related Chapters
Molecular Dynamics Simulations of the Thermal Conductivity of Bismuth Telluride Using Two-Body Interatomic Potentials
Inaugural US-EU-China Thermophysics Conference-Renewable Energy 2009 (UECTC 2009 Proceedings)
Experiments and Molecular Dynamics Simulation of Droplets Behaviour and Phase Change in Magnesium Heat Pipe
Inaugural US-EU-China Thermophysics Conference-Renewable Energy 2009 (UECTC 2009 Proceedings)
Molecular Dynamics Simulation of Grinding Process on Mg-Al Alloy
International Conference on Mechanical and Electrical Technology, 3rd, (ICMET-China 2011), Volumes 1–3