A three-dimensional numerical study has been carried out on the rotating disk GaN MOCVD process, and it is also coupled with an experimental study on the flow and thermal transport processes in the system. An impingement type reactor, with a rotating base, is considered. The dependence of the thin film growth rate and uniformity on operating conditions such as inflow velocity, rotational speed, and susceptor temperature are investigated in detail. Similarly, the effect of the geometry and configuration of the reactor are studied. The study also considers the effect of thermal and solutal buoyancy on the resulting flow. The flow and the associated transport processes are discussed in detail on the basis of the results obtained to suggest approaches to improve the uniformity of the film, minimize fluid loss and reduce flow recirculation that could affect growth rate and uniformity.
Skip Nav Destination
ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer
December 11–14, 2013
Hong Kong, China
Conference Sponsors:
- Heat Transfer Division
ISBN:
978-0-7918-5615-4
PROCEEDINGS PAPER
Fabrication of GaN Films in a Chemical Vapor Deposition Reactor
J. Meng,
J. Meng
Rutgers, The State University of New Jersey, Piscataway, NJ
Search for other works by this author on:
Y. Jaluria,
Y. Jaluria
Rutgers, The State University of New Jersey, Piscataway, NJ
Search for other works by this author on:
S. Wong
S. Wong
Rutgers, The State University of New Jersey, Piscataway, NJ
Search for other works by this author on:
J. Meng
Rutgers, The State University of New Jersey, Piscataway, NJ
Y. Jaluria
Rutgers, The State University of New Jersey, Piscataway, NJ
S. Wong
Rutgers, The State University of New Jersey, Piscataway, NJ
Paper No:
MNHMT2013-22053, V001T07A001; 11 pages
Published Online:
February 26, 2014
Citation
Meng, J, Jaluria, Y, & Wong, S. "Fabrication of GaN Films in a Chemical Vapor Deposition Reactor." Proceedings of the ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer. ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer. Hong Kong, China. December 11–14, 2013. V001T07A001. ASME. https://doi.org/10.1115/MNHMT2013-22053
Download citation file:
10
Views
Related Proceedings Papers
Related Articles
Fabrication of Gallium Nitride Films in a Chemical Vapor Deposition Reactor
J. Thermal Sci. Eng. Appl (June,2015)
Experimental Study of the Effect of Precursor Composition on the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process
J. Heat Transfer (October,2021)
Manufacturing of Gallium Nitride Thin Films in a Multi-Wafer MOCVD Reactor
J. Thermal Sci. Eng. Appl (June,2023)
Related Chapters
Chemical Vapor Deposition of TiO 2 Thin Films at Room Temperature
Laser Induced Damage in Optical Materials: 1986
Introduction
Turbine Aerodynamics: Axial-Flow and Radial-Flow Turbine Design and Analysis
Completing the Picture
Air Engines: The History, Science, and Reality of the Perfect Engine