Recent advances in nanotechnology create a demand for greater scientific understanding of the transient ballistic phonon transport at the nanoscale. It is believed that ballistic phonons may travel for long distances without destruction, but it is unclear how far they can travel. Here, a numerical model is developed to study phonon transport in silicon nanofilms. It is elucidated how thermal pulses are transmitted in silicon nanofilms by longitudinal, ballistic transverse and dispersive transverse phonons. It is found that both ballistic longitudinal and ballistic transverse phonons are highly dissipative so they can only travel for short distances, while dispersive transverse phonons at lower frequencies are less dissipative and can travel for longer distances. There exists a similarity parameter (Knudsen number) in thin-film heat conduction with different thicknesses.
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ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer
March 3–6, 2012
Atlanta, Georgia, USA
Conference Sponsors:
- Nanotechnology Institute
ISBN:
978-0-7918-5477-8
PROCEEDINGS PAPER
Heat Pulse Propagation Along Silicon Nanofilms
Yanbao Ma
Yanbao Ma
University of California at Merced, Merced, CA
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Yanbao Ma
University of California at Merced, Merced, CA
Paper No:
MNHMT2012-75324, pp. 917-922; 6 pages
Published Online:
July 18, 2013
Citation
Ma, Y. "Heat Pulse Propagation Along Silicon Nanofilms." Proceedings of the ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. Atlanta, Georgia, USA. March 3–6, 2012. pp. 917-922. ASME. https://doi.org/10.1115/MNHMT2012-75324
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