The increase in the integration of interconnect wiring, as well as the high level of current densities are resulting in increased concerns about hot spot formation due to Joule heating in the metal lines of microprocessors. This temperature rise poses a major challenge in maintaining the quality and reliability of future devices, requiring a focus on physics based approaches for rapid and accurate thermal analysis of interconnect architectures. This work investigates the problem of transient Joule heating in a three-dimensional array of copper interconnects embedded in dielectric layers of SiO2 and Si3N4 using Proper Orthogonal Decomposition (POD) as the reduced order modeling approach. The case of natural convection was assumed on the boundaries. For validation, the results were compared with a three-dimensional finite volume model developed in Fluent and good agreements models were observed. While the Fluent model required hours of computational time, the POD based model predictions were achieved within seconds.
Skip Nav Destination
ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer
March 3–6, 2012
Atlanta, Georgia, USA
Conference Sponsors:
- Nanotechnology Institute
ISBN:
978-0-7918-5477-8
PROCEEDINGS PAPER
Rapid Transient Thermal Analysis of Three-Dimensional Interconnect Structures Using Proper Orthogonal Decomposition Method Available to Purchase
Banafsheh Barabadi,
Banafsheh Barabadi
Georgia Institute of Technology, Atlanta, GA
Search for other works by this author on:
Satish Kumar,
Satish Kumar
Georgia Institute of Technology, Atlanta, GA
Search for other works by this author on:
Yogendra K. Joshi
Yogendra K. Joshi
Georgia Institute of Technology, Atlanta, GA
Search for other works by this author on:
Banafsheh Barabadi
Georgia Institute of Technology, Atlanta, GA
Satish Kumar
Georgia Institute of Technology, Atlanta, GA
Yogendra K. Joshi
Georgia Institute of Technology, Atlanta, GA
Paper No:
MNHMT2012-75286, pp. 729-733; 5 pages
Published Online:
July 18, 2013
Citation
Barabadi, B, Kumar, S, & Joshi, YK. "Rapid Transient Thermal Analysis of Three-Dimensional Interconnect Structures Using Proper Orthogonal Decomposition Method." Proceedings of the ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. Atlanta, Georgia, USA. March 3–6, 2012. pp. 729-733. ASME. https://doi.org/10.1115/MNHMT2012-75286
Download citation file:
9
Views
Related Proceedings Papers
Related Articles
Effect of the Crystallinity on the Electromigration Resistance of Electroplated Copper Thin-Film Interconnections
J. Electron. Packag (June,2017)
Compact Thermal Models: A Global Approach
J. Electron. Packag (December,2008)
Related Chapters
Simultaneous Thermal Conductivity and Specific Heat Measurements of Thin Samples by Transient Joule Self-Heating
Inaugural US-EU-China Thermophysics Conference-Renewable Energy 2009 (UECTC 2009 Proceedings)
Microstructure Evolution and Physics-Based Modeling
Ultrasonic Welding of Lithium-Ion Batteries
Comparing Fault-Tolerant Architecture for Automotive Safety Applications in Light of IEC 61508
International Conference on Computer Technology and Development, 3rd (ICCTD 2011)