Accurate thermal conductivity values are essential to the modeling, design, and thermal management of microelectromechanical systems (MEMS) and devices. However, the experimental technique best suited to measure thermal conductivity, as well as thermal conductivity itself, varies with the device materials, fabrication conditions, geometry, and operating conditions. In this study, the thermal conductivity of boron doped single-crystal silicon-on-insulator (SOI) microbridges is measured over the temperature range from 77 to 350 K. The microbridges are 4.6 mm long, 125 μm tall, and two widths, 50 or 85 μm. Measurements on the 85 μm wide microbridges are made using both steady-state electrical resistance thermometry and optical time-domain thermoreflectance. A thermal conductivity of ∼ 77 W/mK is measured for both microbridge widths at room temperature, where both experimental techniques agree. However, a discrepancy at lower temperatures is attributed to differences in the interaction volumes and in turn, material properties, probed by each technique. This finding is qualitatively explained through Boltzmann transport equation modeling under the relaxation time approximation.
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ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer
March 3–6, 2012
Atlanta, Georgia, USA
Conference Sponsors:
- Nanotechnology Institute
ISBN:
978-0-7918-5477-8
PROCEEDINGS PAPER
Thermal Conductivity of Single-Crystal Silicon Microbridges Measured by Electrical Resistance Thermometry and Time-Domain Thermoreflectance Available to Purchase
Timothy S. English,
Timothy S. English
Sandia National Laboratories, Albuquerque, NM
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Leslie M. Phinney,
Leslie M. Phinney
Sandia National Laboratories, Albuquerque, NM
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Patrick E. Hopkins,
Patrick E. Hopkins
University of Virginia, Charlottesville, VA
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Justin R. Serrano
Justin R. Serrano
Sandia National Laboratories, Albuquerque, NM
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Timothy S. English
Sandia National Laboratories, Albuquerque, NM
Leslie M. Phinney
Sandia National Laboratories, Albuquerque, NM
Patrick E. Hopkins
University of Virginia, Charlottesville, VA
Justin R. Serrano
Sandia National Laboratories, Albuquerque, NM
Paper No:
MNHMT2012-75179, pp. 713-722; 10 pages
Published Online:
July 18, 2013
Citation
English, TS, Phinney, LM, Hopkins, PE, & Serrano, JR. "Thermal Conductivity of Single-Crystal Silicon Microbridges Measured by Electrical Resistance Thermometry and Time-Domain Thermoreflectance." Proceedings of the ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. Atlanta, Georgia, USA. March 3–6, 2012. pp. 713-722. ASME. https://doi.org/10.1115/MNHMT2012-75179
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