The temperature rise in LEDs is an important parameter that must be determined for both thermal management and device lifetime/reliability assessment. Commonly used indirect methods of measuring the device temperature either estimate the multiple quantum well (MQW) temperature based on measuring temperature dependent device characteristics (e.g., forward voltage and electroluminescence methods), or they measure the average temperature across the device structure using optical methods such as infrared (IR) thermography and thermoreflectance. However, none give true insight into the vertical distribution of temperature in these structures. In this study, Raman spectroscopy is applied for the first time to operating UV LEDs to give the temperature rise in discrete layers within the LED device structure, going from the growth substrate to layers adjacent to theMQWs. Comparisons are made with IR themography to contrast with this depth sensitive measurement technique. It was observed that the peak temperatures in the device were much higher than the temperatures indicated by IR while the averaged temperatures through the structure compared favorably. Additional comparisons to electroluminescence measurements were also made which compared favorably with the peak temperatures found by Raman Spectroscopy.
- Nanotechnology Institute
Thermal Characterization of Discrete Device Layers in AlxGa1−xN Based Ultraviolet Light Emitting Diodes
Natarajan, S, Watkins, BG, Adivarahan, V, Khan, A, & Graham, S. "Thermal Characterization of Discrete Device Layers in AlxGa1−xN Based Ultraviolet Light Emitting Diodes." Proceedings of the ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. Atlanta, Georgia, USA. March 3–6, 2012. pp. 695-705. ASME. https://doi.org/10.1115/MNHMT2012-75146
Download citation file: