We consider the generalized micro heat transfer model in a 1D microsphere with N-carriers and Neumann boundary condition in spherical coordinates, which can be applied to describe non-equilibrium heating in biological cells. An accurate and unconditionally stable Crank-Nicholson type of scheme is presented for solving the generalized model, where a new second-order accurate numerical scheme for the Neumann boundary condition is developed so that the overall truncation error is second-order. The present scheme is then tested by a numerical example. Results show that the numerical solution is much more accurate than that obtained based on the Crank-Nicholson scheme with the conventional method for the Neumann boundary condition. Furthermore, the convergence rate of the present scheme is about 1.8 with respect to the spatial variable, while the convergence rate of the Crank-Nicholson scheme with the conventional method for the Neumann boundary condition is only 1.0 with respect to the spatial variable.
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ASME 2009 Second International Conference on Micro/Nanoscale Heat and Mass Transfer
December 18–21, 2009
Shanghai, China
Conference Sponsors:
- Nanotechnology Institute
ISBN:
978-0-7918-4390-1
PROCEEDINGS PAPER
An Accurate and Stable Numerical Method for Solving a Micro Heat Transfer Model in a 1D N-Carrier System in Spherical Coordinates
Weizhong Dai,
Weizhong Dai
Louisiana Tech University, Ruston, LA
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Da Yu Tzou
Da Yu Tzou
University of Missouri, Columbia, MO
Search for other works by this author on:
Weizhong Dai
Louisiana Tech University, Ruston, LA
Da Yu Tzou
University of Missouri, Columbia, MO
Paper No:
MNHMT2009-18043, pp. 487-496; 10 pages
Published Online:
October 26, 2010
Citation
Dai, W, & Tzou, DY. "An Accurate and Stable Numerical Method for Solving a Micro Heat Transfer Model in a 1D N-Carrier System in Spherical Coordinates." Proceedings of the ASME 2009 Second International Conference on Micro/Nanoscale Heat and Mass Transfer. ASME 2009 Second International Conference on Micro/Nanoscale Heat and Mass Transfer, Volume 2. Shanghai, China. December 18–21, 2009. pp. 487-496. ASME. https://doi.org/10.1115/MNHMT2009-18043
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