The density of states at the energy levels associated with radiation-induced defects, the localization length of a defect center, and the hopping distance of charge carriers are determined in a TlInS 2 crystal. It is demonstrated that, by varying the dose of gamma radiation, it is possible to control the dielectric properties of ferroelectrics and to attain a stable relaxor state. In the temperature range of existence of this state, charge carriers execute tunneling from electron levels in the band gap through potential barriers created by an incommensurate superstructure of the TlInS 2 crystal. The considerable interest expressed by researchers in this class of ferroelectrics stems from the fact that these materials are very promising for use in data-storage systems. It will allow creating the processor on the uniform semi-conductor chip with the device for electronic reading and recording of the information from magnetic materials.