Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

This content is only available via PDF.
You do not currently have access to this content.