Mechanical properties of the silicon wafer are evaluated by a nano indenter system with the continuous stiffness measurement (CSM) technique. Contact stiffness, hardness and elastic modulus of the silicon wafer are continuously measured during the loading in an indentation test. The results show that when the contact depth is between 20 and 32 nm, its contact stiffness is linear with the contact depth, and its hardness and elastic modulus keep constant at 10.2 GPa and 140.3 GPa respectively, which belong to the oxide coating of the silicon wafer. When the contact depth is between 32 and 60 nm, its contact stiffness is not linear with the contact depth, and the hardness and elastic modulus increase rapidly with the contact depth, because they are affected by the bulk material. When the contact depth is over 60 nm, the contact stiffness of the silicon wafer is linear with the contact depth again, and the hardness and elastic modulus keep constant at 12.5 GPa and 165.6 GPa respectively, which belong to the silicon wafer, the bulk material.
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2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
January 10–13, 2007
Sanya, Hainan, China
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4265-7
PROCEEDINGS PAPER
Characterization of Surface Layer of Silicon Wafer by Using Nano Indenter
Yu-Li Sun,
Yu-Li Sun
Nanjing University of Aeronautics and Astronautics, Nanjing, China
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Dun-Wen Zuo,
Dun-Wen Zuo
Nanjing University of Aeronautics and Astronautics, Nanjing, China
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Yong-Wei Zhu,
Yong-Wei Zhu
Nanjing University of Aeronautics and Astronautics, Nanjing, China
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Feng Xu,
Feng Xu
Nanjing University of Aeronautics and Astronautics, Nanjing, China
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Min Wang
Min Wang
Nanjing University of Aeronautics and Astronautics, Nanjing, China
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Yu-Li Sun
Nanjing University of Aeronautics and Astronautics, Nanjing, China
Dun-Wen Zuo
Nanjing University of Aeronautics and Astronautics, Nanjing, China
Yong-Wei Zhu
Nanjing University of Aeronautics and Astronautics, Nanjing, China
Feng Xu
Nanjing University of Aeronautics and Astronautics, Nanjing, China
Min Wang
Nanjing University of Aeronautics and Astronautics, Nanjing, China
Paper No:
MNC2007-21233, pp. 649-653; 5 pages
Published Online:
June 8, 2009
Citation
Sun, Y, Zuo, D, Zhu, Y, Xu, F, & Wang, M. "Characterization of Surface Layer of Silicon Wafer by Using Nano Indenter." Proceedings of the 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B. Sanya, Hainan, China. January 10–13, 2007. pp. 649-653. ASME. https://doi.org/10.1115/MNC2007-21233
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