Lift-off has been widely used in microfabrication process. In normal lift-off process, after photolithography and developing, a thin layer of residua will remain on the exposed substrate. To remove the residua, descum and back sputtering are required before metal sputtering. However, because of the high temperature of descum process and high energy induced by ion bombardment during back sputtering, the up inner angle of photoresist will increase in normal lift-off process. The metal films will deposit on the sidewall of the photoresist, and adhere to the substrate even after the photoresist removal. In order to overcome these problems, a lift-off process adopting dual layer photoresist is introduced in this paper, and high quality metallic pattern could be made.
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2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
January 10–13, 2007
Sanya, Hainan, China
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4265-7
PROCEEDINGS PAPER
Dual Layer Photoresist and Back Sputtering Applied in Lift-Off Technique
Lu Zhang,
Lu Zhang
Peking University, Beijing, China; Changchun University of Science and Technology, Changchun, China
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Zhenchuan Yang,
Zhenchuan Yang
Peking University, Beijing, China
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Guizhen Yan
Guizhen Yan
Peking University, Beijing, China
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Lu Zhang
Peking University, Beijing, China; Changchun University of Science and Technology, Changchun, China
Le Zhang
Peking University, Beijing, China
Ying Wang
Peking University, Beijing, China
Zhenchuan Yang
Peking University, Beijing, China
Guizhen Yan
Peking University, Beijing, China
Paper No:
MNC2007-21560, pp. 587-589; 3 pages
Published Online:
June 8, 2009
Citation
Zhang, L, Zhang, L, Wang, Y, Yang, Z, & Yan, G. "Dual Layer Photoresist and Back Sputtering Applied in Lift-Off Technique." Proceedings of the 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B. Sanya, Hainan, China. January 10–13, 2007. pp. 587-589. ASME. https://doi.org/10.1115/MNC2007-21560
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