Semiconductor quantum dots have been of major interest in recent years. This has largely been simulated by progress in quantum dot growth technology, whereby self-organized quantum dots array can be achieved using Stranski-Krastanow growth mode. Quantum does material has achieved broad applications in optoelectronic devices and quantum information fields because of the unique 3-D electron confinement. Based on the 1-band effective-mass theory, a finite element technique is developed to calculate the electronic structure of conical shaped InAs/GaAs quantum dot, including the wetting layer. Using the axis-symmetry model, the 3-D effective-mass Schro¨dinger equation with step potential barrier can be reduced to a 2-D problem by separating variable, which greatly reduced the calculation cost. Based on the result, we found, compared without wetting layer, the wetting layer can influence the electron level. This may attribute to the increase of the confining potential width rather than the potential height. The presented finite element code can be further used to analysis the transverse or vertical coupled quantum dot molecule.
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2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
January 10–13, 2007
Sanya, Hainan, China
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4265-7
PROCEEDINGS PAPER
The Electronic Structure of Truncated-Conical Shaped InAs/GaAs Quantum Dot With Wetting Layers
Yumin Liu,
Yumin Liu
Beijing University of Posts and Telecommunications, Beijing, China
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Zhongyuan Yu,
Zhongyuan Yu
Beijing University of Posts and Telecommunications, Beijing, China
Search for other works by this author on:
Xiaomin Ren
Xiaomin Ren
Beijing University of Posts and Telecommunications, Beijing, China
Search for other works by this author on:
Yumin Liu
Beijing University of Posts and Telecommunications, Beijing, China
Zhongyuan Yu
Beijing University of Posts and Telecommunications, Beijing, China
Xiaomin Ren
Beijing University of Posts and Telecommunications, Beijing, China
Paper No:
MNC2007-21539, pp. 575-579; 5 pages
Published Online:
June 8, 2009
Citation
Liu, Y, Yu, Z, & Ren, X. "The Electronic Structure of Truncated-Conical Shaped InAs/GaAs Quantum Dot With Wetting Layers." Proceedings of the 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B. Sanya, Hainan, China. January 10–13, 2007. pp. 575-579. ASME. https://doi.org/10.1115/MNC2007-21539
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