Under the operating conditions of high collision and strong vibration, a new high-g piezoresistive accelerometer (with a full range of 150000g) is designed. This design consists of 4-beams and 1-tower. This structure possesses superior anti-shock ability. In optimizing this piezoresistive bridge structure, a tower is etched directly from the back of the mass in KOH by using the (111) plane etch-stop technique. Since the distances between the mass center of the tower and the mass centers of the beams are shortened, anti-shock ability in transverse directions is improved. In addition, the fabrication process is relatively straightforward. Finally, it is found by impact experiments that the linearity of the optimized design lies within 9% for measurements in the range of 0–150000g.
- Nanotechnology Institute
Optimization in Design of High-g Accelerometers
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Liu, J, Qi, X, Shi, Y, & Ma, F. "Optimization in Design of High-g Accelerometers." Proceedings of the 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B. Sanya, Hainan, China. January 10–13, 2007. pp. 469-474. ASME. https://doi.org/10.1115/MNC2007-21277
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