In this paper, we present a new technique that could realize wafer level 3-D hermetic package in a very low bonding temperature (120°C) for MEMS (Micro-electro-mechanical Systems) devices. Microcavities were etched on a host glass wafer and were bonded with a carrier silicon wafer. MicroChem SU-8 photoresist is used as the intermediate adhesive layer between the host and carrier wafer. The devices were fabricated by self-aligning etching technique and were finally sealed by coating the structures with sputtered aluminum. Helium leak testing is carried out to verify the hermetic characteristics of the package, 99.7% of the tested devices were qualified. This technology shows a significant improvement of the hermeticity properties of adhesive bonded cavities, making it particularly suitable for applications on gas-tightness with low temperature, non-aggressive demands.
- Nanotechnology Institute
A Low Temperature, Non-Aggressive Wafer Level Hermetic Package With UV Cured SU8 Bond
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Wu, Y, Tang, G, & Chen, J. "A Low Temperature, Non-Aggressive Wafer Level Hermetic Package With UV Cured SU8 Bond." Proceedings of the 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B. Sanya, Hainan, China. January 10–13, 2007. pp. 1523-1526. ASME. https://doi.org/10.1115/MNC2007-21528
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