In this paper, a novel PZT film patterning method by femtosecond laser is proposed. The method is different from traditional dry-etching and wet-etching technology. Femtosecond laser microfabrication technology has several advantages such as high resolution, no mask direct-writing and seldom-heating, etc. A two-layer (PZT thin film and substrate) heating and ablating threshold model is built and the relationship of PZT/Si two-layer system micro ablation morphology depending on laser pulse energy is constructed. From the model and experiment data, we obtain the suitable energy region to pattern PZT film freely without damage Si substrate. A 3μm resolution of PZT pattern is achieved in our experiment. In order to verify the fabrication available of this technology, several micro functional devices are successfully patterned by optimized femtosecond pulsed laser energy and their function are detected. The results prove that the PZT patterning quality is good.
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2007 First International Conference on Integration and Commercialization of Micro and Nanosystems
January 10–13, 2007
Sanya, Hainan, China
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4265-7
PROCEEDINGS PAPER
PZT Film and Si Substrate Two-Layer System Patterning Morphology by Femtosecond Pulsed Laser
Guanghua Cheng,
Guanghua Cheng
Xi’an Institute of Optics and Precision Mechanisms, Xi’an, China
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Jiaru Chu
Jiaru Chu
USTC-Hefei, Hefei, China
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Shizhou Xiao
USTC-Hefei, Hefei, China
Rui Guo
USTC-Hefei, Hefei, China
Guanghua Cheng
Xi’an Institute of Optics and Precision Mechanisms, Xi’an, China
Yalei Wu
USTC-Hefei, Hefei, China
Wenhao Huang
USTC-Hefei, Hefei, China
Jiaru Chu
USTC-Hefei, Hefei, China
Paper No:
MNC2007-21186, pp. 1309-1314; 6 pages
Published Online:
June 8, 2009
Citation
Xiao, S, Guo, R, Cheng, G, Wu, Y, Huang, W, & Chu, J. "PZT Film and Si Substrate Two-Layer System Patterning Morphology by Femtosecond Pulsed Laser." Proceedings of the 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B. Sanya, Hainan, China. January 10–13, 2007. pp. 1309-1314. ASME. https://doi.org/10.1115/MNC2007-21186
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