High-performance transparent and flexible thin film transistors (TFTs) were fabricated on glass and plastic substrates using alligned SnO2 nanowires as the channel material. High densities of crystalline SnO2 nanowires were dry-transferred directly onto the glass/plastic substrates, followed by low-temperature patterning of the source/drain and gate electrodes. Transparent TFTs fabricated on glass substrates show excellent electrical properties and optical transmittance. Excellent mechanical flexibility can be further obtained under cyclic tension experiments in devices fabricated on plastic substrates. The charge carrier mobility was estimated to be as high as 160 cm2/V·s — two orders of magnitude higher than that of conventional amorphous-silicon or organic TFTs. Cutoff frequency > 70 MHz and on/off ratio > 106 have also been demonstrated. The low-cost nanowire growth and dry-transfer processes make this approach a cost-effective means to fabricate transparent and/or flexible TFTs on non-conventional substrates.
Skip Nav Destination
Close
Sign In or Register for Account
2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
June 3–5, 2008
Clear Water Bay, Kowloon, Hong Kong
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4294-0
PROCEEDINGS PAPER
Nanowire-Based High Speed Transparent and Flexible Thin-Film Transistor Devices
Eric N. Dattoli,
Eric N. Dattoli
University of Michigan, Ann Arbor, MI
Search for other works by this author on:
Wei Lu
Wei Lu
University of Michigan, Ann Arbor, MI
Search for other works by this author on:
Eric N. Dattoli
University of Michigan, Ann Arbor, MI
Kevin Baler
Cornell University, Ithaca, NY
Wei Lu
University of Michigan, Ann Arbor, MI
Paper No:
MicroNano2008-70328, pp. 757-759; 3 pages
Published Online:
June 12, 2009
Citation
Dattoli, EN, Baler, K, & Lu, W. "Nanowire-Based High Speed Transparent and Flexible Thin-Film Transistor Devices." Proceedings of the 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. Clear Water Bay, Kowloon, Hong Kong. June 3–5, 2008. pp. 757-759. ASME. https://doi.org/10.1115/MicroNano2008-70328
Download citation file:
- Ris (Zotero)
- Reference Manager
- EasyBib
- Bookends
- Mendeley
- Papers
- EndNote
- RefWorks
- BibTex
- ProCite
- Medlars
Close
Sign In
3
Views
0
Citations
Related Proceedings Papers
Related Articles
Computational Model for Transport in Nanotube-Based Composites With Applications to Flexible Electronics
J. Heat Transfer (April,2007)
Rapid Anneal-Free Welding of Cu Nanowires Network by Ultraviolet Light Irradiation for Transparent Electrodes in Optoelectronic Applications
J. Electron. Packag (September,2020)
Related Chapters
Analysis of Optical Properties of Silicon Nanowire Arrays Using Effective Medium Theory
International Conference on Mechanical and Electrical Technology, 3rd, (ICMET-China 2011), Volumes 1–3
Fabrication of MSM UV Detector Using ZnO Nanowires
International Conference on Computer and Electrical Engineering 4th (ICCEE 2011)
Management Information System: A Promising System for Economic and Statistical Organisation under E-Governance
International Conference on Mechanical and Electrical Technology, 3rd, (ICMET-China 2011), Volumes 1–3