This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.
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2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
June 3–5, 2008
Clear Water Bay, Kowloon, Hong Kong
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4294-0
PROCEEDINGS PAPER
Growth and Characterization of PZT Thin Films
Daqun Bao
,
Daqun Bao
Xiamen University, Xiamen, Fujian, China
Search for other works by this author on:
Yi Zhang
,
Yi Zhang
Xiamen University, Xiamen, Fujian, China
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Hang Guo
Hang Guo
Xiamen University, Xiamen, Fujian, China
Search for other works by this author on:
Daqun Bao
Xiamen University, Xiamen, Fujian, China
Yi Zhang
Xiamen University, Xiamen, Fujian, China
Hang Guo
Xiamen University, Xiamen, Fujian, China
Paper No:
MicroNano2008-70289, pp. 751-755; 5 pages
Published Online:
June 12, 2009
Citation
Bao, D, Zhang, Y, & Guo, H. "Growth and Characterization of PZT Thin Films." Proceedings of the 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. Clear Water Bay, Kowloon, Hong Kong. June 3–5, 2008. pp. 751-755. ASME. https://doi.org/10.1115/MicroNano2008-70289
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