This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.

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