A* high Q-factor circular-section solenoid-type inductor is designed and fabricated through micro electro mechanical system (MEMS) technology. The radius of the circular-section is 100μm. Ansoft HFSS is used to design and optimize the structure parameters of the inductor. The stable inductance of 10nH and maximum Q-factor of 46 is gained at the N of 10, wire width w of 10μm, space between wires d of 15μm and the self-resonance frequency of the inductor is above 10GHz. A novel fabrication method—flip chip bonding is proposed to bond the two parts of the inductor, and the process is compatible with CMOS process.

Volume Subject Area:
Micro-Nano Electronics and Materials
Keywords:
circular-section, solenoid inductors, Q-factor, flip chip, CMOS-compatible
Topics:
Complementary metal oxide semiconductors, Flip-chip, Flip-chip devices, Inductors, Q-factor, Solenoids
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Copyright © 2008
 by ASME
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