A new structure of MEMS Uncooled capacitive focal plane array (FPA) is presented and its thermo-mechanical behaviors are studied. A surface process with poly-silicon as a sacrificial layer was developed, and in which poly-silicon was dry etched by SF6 in an ICP system of STS. The etching rates of poly-silicon in lateral and vertical can reach 3.8 and 5.6μm/min after the optimization of the process. The process is simple and compatible with most of the IC processes.

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