A method for fabricating gallium nitride (GaN) based microelectromechanical (MEM) devices on silicon substrate was demonstrated. Various suspended GaN microstructures have been fabricated using ICP (Inductive coupled plasma)-based sacrificial etching of the underlying silicon with combination of both anisotropic and isotropic etching techniques, so that deeply released freestanding microstructures with minimized lateral undercut can be achieved. Cl2-based ICP-RIE (Reactive ion etching) dry etching technique is employed to pattern gallium nitride. The experimental results show that freestanding GaN microstructures with large air gap of high depth-to-width ratio can be realized by employing such two-step dry releasing technique. Fabrication results have been characterized by scanning electron microscope (SEM).
Skip Nav Destination
2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
June 3–5, 2008
Clear Water Bay, Kowloon, Hong Kong
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4294-0
PROCEEDINGS PAPER
Fabrication of Suspending GAN Microstructures With Combinations of Anisotropic and Isotropic Dry Etching Techniques Available to Purchase
Zhenchuan Yang,
Zhenchuan Yang
Peking University, Beijing, China
Search for other works by this author on:
Kevin J. Chen
Kevin J. Chen
Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Search for other works by this author on:
Jianan Lv
Peking University, Beijing, China
Zhenchuan Yang
Peking University, Beijing, China
Kevin J. Chen
Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Paper No:
MicroNano2008-70037, pp. 573-577; 5 pages
Published Online:
June 12, 2009
Citation
Lv, J, Yang, Z, & Chen, KJ. "Fabrication of Suspending GAN Microstructures With Combinations of Anisotropic and Isotropic Dry Etching Techniques." Proceedings of the 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. Clear Water Bay, Kowloon, Hong Kong. June 3–5, 2008. pp. 573-577. ASME. https://doi.org/10.1115/MicroNano2008-70037
Download citation file:
23
Views
Related Proceedings Papers
Related Articles
Development of Plasma Nanomanufacturing Workcell
J. Manuf. Sci. Eng (June,2010)
Related Chapters
The Tribological Character of LB Films of Dipalmitoylphosphatidylcholine (DPPC)
International Conference on Mechanical and Electrical Technology, 3rd, (ICMET-China 2011), Volumes 1–3
Simulation of Plasma Discharges in Plasma Enhanced Chemical Vapor Deposition for Microcrystalline Silicon Films
International Conference on Electronics, Information and Communication Engineering (EICE 2012)
Dry Etching Using NF 3 /Ar and NF 3 /He Plasmas
Semiconductor Processing