In this Study, we measured the interface thermal resistance between metal/dielectric layers using a sandwiched structure. Common used metal thin films in MEMS including chromium, nickel, aluminum, titanium, and platinum, were sandwiched in between two PECVD SiO2 layers. Measured values of the interface thermal resistance distributed over the range of 2.5∼3.8×10−8 m2K/W. The continuum two-fluid model was served to provide some reasonable physical insight into the cause of metal/dielectric interface thermal resistance, and also to verify our measurement data. The estimated values are much smaller than the measured values. Moreover, the adhesion tests were implemented to verify the interrelation between the interface adhesion force and the measured interface thermal resistance. The results show the interface thermal resistance is very insensitivity to the adhesion force.
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2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
June 3–5, 2008
Clear Water Bay, Kowloon, Hong Kong
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4294-0
PROCEEDINGS PAPER
Study for the Interface Thermal Resistance of Metal-Dielectric Layers Available to Purchase
Heng-Chieh Chien,
Heng-Chieh Chien
Industrial Technology Research Institute; National Tsing Hua University, Hsinchu, Taiwan
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Da-Jen Yao,
Da-Jen Yao
National Tsing Hua University, Hsinchu, Taiwan
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Cheng-Ting Hsu
Cheng-Ting Hsu
National Tsing Hua University, Hsinchu, Taiwan
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Heng-Chieh Chien
Industrial Technology Research Institute; National Tsing Hua University, Hsinchu, Taiwan
Da-Jen Yao
National Tsing Hua University, Hsinchu, Taiwan
Cheng-Ting Hsu
National Tsing Hua University, Hsinchu, Taiwan
Paper No:
MicroNano2008-70280, pp. 423-427; 5 pages
Published Online:
June 12, 2009
Citation
Chien, H, Yao, D, & Hsu, C. "Study for the Interface Thermal Resistance of Metal-Dielectric Layers." Proceedings of the 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. Clear Water Bay, Kowloon, Hong Kong. June 3–5, 2008. pp. 423-427. ASME. https://doi.org/10.1115/MicroNano2008-70280
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