Radiative heat transfer between materials with dielectric coatings is numerically studied based on the fluctuational electrodynamics and the fluctuation-dissipation theorem. The results show that whereas a dielectric coating (SiC) enhances the far-field radiative heat transfer between two bulk metals, it will suppress the radiative heat transfer in the near-field and the suppression is only for the s-wave contribution. The total radiative heat flux continuously decreases as the coating thickness increases up to 1 μm. A further increase in the coating thickness will cause the total radiative heat flux to increase slightly before it saturates. In addition, a much smaller coating thickness than the coating’s skin depth is enough to significantly change the total radiative heat flux in the near-field region. On the contrary, a thin dielectric coating that supports surface polaritons can greatly enhance the radiative heat transfer between a metal and a dielectric in the case that the coating is on the metal. The large enhancement is due to surface polaritons excited on the two surfaces of the air gap boundaries.
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2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
June 3–5, 2008
Clear Water Bay, Kowloon, Hong Kong
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4294-0
PROCEEDINGS PAPER
Near-Field Radiative Heat Transfer Between Materials With Dielectric Coatings Available to Purchase
Wenchang Tan
Wenchang Tan
Peking University, Beijing, China
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Ceji Fu
Peking University, Beijing, China
Wenchang Tan
Peking University, Beijing, China
Paper No:
MicroNano2008-70279, pp. 415-421; 7 pages
Published Online:
June 12, 2009
Citation
Fu, C, & Tan, W. "Near-Field Radiative Heat Transfer Between Materials With Dielectric Coatings." Proceedings of the 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. Clear Water Bay, Kowloon, Hong Kong. June 3–5, 2008. pp. 415-421. ASME. https://doi.org/10.1115/MicroNano2008-70279
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