The density of states at the energy levels associated with radiation-induced defects, the localization length of a defect center, and the hopping distance of charge carriers are determined in a TlInS2 crystal. It is demonstrated that, by varying the dose of gamma radiation, it is possible to control the dielectric properties of ferroelectrics and to attain a stable relaxor state. In the temperature range of existence of this state, charge carriers execute tunneling from electron levels in the band gap through potential barriers created by an incommensurate superstructure of the TlInS2 crystal. The considerable interest expressed by researchers in this class of ferroelectrics stems from the fact that these materials are very promising for use in data-storage systems. It will allow creating the processor on the uniform semi-conductor chip with the device for electronic reading and recording of the information from magnetic materials.
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2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems
June 3–5, 2008
Clear Water Bay, Kowloon, Hong Kong
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4294-0
PROCEEDINGS PAPER
Relaxor Properties and Conduction in TlInS2 Crystals Available to Purchase
Rauf Sardarly,
Rauf Sardarly
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
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Oktay Samedov,
Oktay Samedov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
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Arzu Nadzhafov,
Arzu Nadzhafov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
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Famin Salmanov,
Famin Salmanov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
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Adil Abdullayev,
Adil Abdullayev
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
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Azad Bayramov
Azad Bayramov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
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Rauf Sardarly
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Oktay Samedov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Arzu Nadzhafov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Famin Salmanov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Adil Abdullayev
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Azad Bayramov
National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
Paper No:
MicroNano2008-70329, pp. 271-275; 5 pages
Published Online:
June 12, 2009
Citation
Sardarly, R, Samedov, O, Nadzhafov, A, Salmanov, F, Abdullayev, A, & Bayramov, A. "Relaxor Properties and Conduction in TlInS2 Crystals." Proceedings of the 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. Clear Water Bay, Kowloon, Hong Kong. June 3–5, 2008. pp. 271-275. ASME. https://doi.org/10.1115/MicroNano2008-70329
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