Abstract
This paper presents an analysis and design of a power MOSFET transistor embedded in a printed circuit board (PCB). The analysis and design are supported by 3D electro-thermo-mechanical simulations. The analysis is focused on a comparison of the properties of a discrete power MOSFET transistor mounted on the surface of a PCB and a power MOSFET transistor embedded in a PCB. The conventional technology of packaged transistors exhibits significantly higher values of parasitic inductance, resistance, and thermal impedance compared to the embedded technology. 3D numerical finite element method simulations are effectively used for the design and optimization of the embedded technology in order to improve the electrical, thermal, and mechanical reliability performance of the device.
