Abstract
Innovations in semiconductor devices are rapidly increasing, allowing electronic devices to operate at higher temperatures and frequencies for improved performance and efficiency. Sintered silver is a promising interconnection technology that provides excellent electrical and thermal connections for high junction temperatures. However, sintered silver bond-lines are porous, typically containing 15% to 20% volume fraction. This study aims to investigate the effects of these pores on the mechanical reliability of the bond-line. The simulations were conducted using ANSYS software with the SMART algorithm. Results of the baseline model indicate that the presence of pores reduces stress concentration on the crack tip. The location of the pore relative to the initial direction of the crack tip influences crack growth path and stress distribution. These findings from the baseline model can be used to design a more complex simulation which includes the actual interconnection geometry with its normal operating conditions.
