As the automotive industry shifts towards the electrification of drive trains, the efficiency of power electronics becomes more important. The use of silicon carbide (SiC) devices in power electronics has shown several benefits in efficiency, blocking voltage and high temperature operation. In addition, the ability of SiC to operate at higher frequencies due to lower switching losses can result in reduced weight and volume of the system, which also are important factors in vehicles. However, the reliability of packaged SiC devices is not yet fully assessed. Previous work has predicted that the different material properties of SiC compared to Si could have a large influence on the failure mechanisms and reliability. For example, the much higher elastic modulus of SiC compared to Si could increase strain on neighboring materials during power cycling. In this work, the failure mechanisms of packaged Si- and SiC-based power devices have been investigated following power cycling tests. The packaged devices were actively cycled in 4.5 s heating and 20 s cooling at ΔT = 60–80 K. A failure analysis using micro-focus X-ray and scanning acoustic microscopy (SAM) was carried out in order to determine the most important failure mechanisms. The results of the analysis indicate that the dominant failure mechanism is wire bond lift-off at the device chip for all of the SiC-based devices. Further analysis is required to determine the exact failure mechanisms of the analyzed Si-based devices. In addition, the SiC-based devices failed before the Si-based devices, which could be a result of the different properties of the SiC material.
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ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
August 27–30, 2018
San Francisco, California, USA
Conference Sponsors:
- Electronic and Photonic Packaging Division
ISBN:
978-0-7918-5192-0
PROCEEDINGS PAPER
Failure Mechanism Assessment of TO-247 Packaged SiC Power Devices
Klas Brinkfeldt,
Klas Brinkfeldt
Swerea IVF AB, Mölndal, Sweden
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Andreas Lövberg,
Andreas Lövberg
Swerea IVF AB, Mölndal, Sweden
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Dag Andersson,
Dag Andersson
Swerea IVF AB, Mölndal, Sweden
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Zsolt Toth-Pal,
Zsolt Toth-Pal
Scania CV AB, Södertälje, Sweden
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Mattias Forslund,
Mattias Forslund
Scania CV AB, Södertälje, Sweden
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Samer Shisha
Samer Shisha
Scania CV AB, Södertälje, Sweden
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Klas Brinkfeldt
Swerea IVF AB, Mölndal, Sweden
Göran Wetter
Swerea IVF AB, Mölndal, Sweden
Andreas Lövberg
Swerea IVF AB, Mölndal, Sweden
Dag Andersson
Swerea IVF AB, Mölndal, Sweden
Zsolt Toth-Pal
Scania CV AB, Södertälje, Sweden
Mattias Forslund
Scania CV AB, Södertälje, Sweden
Samer Shisha
Scania CV AB, Södertälje, Sweden
Paper No:
IPACK2018-8385, V001T04A016; 8 pages
Published Online:
November 13, 2018
Citation
Brinkfeldt, K, Wetter, G, Lövberg, A, Andersson, D, Toth-Pal, Z, Forslund, M, & Shisha, S. "Failure Mechanism Assessment of TO-247 Packaged SiC Power Devices." Proceedings of the ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. San Francisco, California, USA. August 27–30, 2018. V001T04A016. ASME. https://doi.org/10.1115/IPACK2018-8385
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