Metal lines used in integrated circuits (ICs) become narrow for raising the device performance. Due to scaling down of the ICs, current density and Joule heating are increased, which induces electromigration (EM) damage. EM is transportation phenomena of metallic atoms caused by electron wind under high current density. EM leads to hillock and void formation in the metal line, thus EM should be considered to evaluate the performances of the device safe. It is known that a value of threshold current density which is critical current density of the EM damage exists in via-connected and passivated lines. In this study, the effect of line geometry on the threshold current density is discussed in the case of taper-shaped line. The evaluation method of threshold current density is conducted based on numerical simulation technique with building-up processes of atomic density distribution in the metal line by using a governing parameter of EM damage. As the simulation results, threshold current density increased in the cases of shorter line length, lower temperature, and wider width in cathode side. Furthermore, a new parameter was proposed for simplified evaluation of the threshold current density in taper-shaped lines. The evaluation method is able to apply various line shapes and conditions and it is expected to use for confirmation of the reliability of the lines in circuit design processes.

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