Recently two-dimensional layered semiconductors with promising electronic and optical properties, have opened up a new way for applications in atomically thin electronics and optoelectronics. Here we demonstrate large area synthesis of monolayer MoS2 and WSe2 using a chemical vapor deposition method at ambient pressure. The atomic analysis of the as-grown monolayer was conducted by spherical-aberration-corrected high resolution scanning transmission electron microscopy and atomic force microscopy. Raman spectroscopy was utilized to identify the monolayer configuration of the as-grown samples. Strong photoluminescence peaks at a visible wavelength were observed at room temperature in the as-grown monolayer samples. The mobility and carrier concentrations were calculated in as-grown monolayer-based transistor devices. The emergency of these two dimensional materials provides grand possibilities for future semiconductor device applications.
- Electronic and Photonic Packaging Division
Two-Dimensional Monolayer MX2 (M=Mo, W; X=S, Se) Synthesis, Characterization and Device Applications
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Xiang, B, Yang, L, Huang, J, & Fu, Q. "Two-Dimensional Monolayer MX2 (M=Mo, W; X=S, Se) Synthesis, Characterization and Device Applications." Proceedings of the ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays. San Francisco, California, USA. July 6–9, 2015. V003T07A001. ASME. https://doi.org/10.1115/IPACK2015-48286
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