In this paper, we describe the system-level packaging of a 30 kW continuous, 55 kW peak, traction inverter to showcase the electro-thermal-mechanical performance enhancements of silicon carbide (SiC), a wide bandgap (WBG) semiconductor, over silicon. Higher efficiency, larger gravimetric and volumetric power densities, and smaller thermal management system requirements may be achieved through higher operating junction temperatures afforded by SiC versus silicon power devices. By applying advanced system-level packaging techniques, high-temperature control circuitry, utilizing 105°C-rated capacitors, and reducing the number of system interconnects and attaches to enable higher system reliability, a substantial cost reduction from the die level to the system level can be demonstrated by completely eliminating an electric vehicle’s secondary low-temperature cooling loop. The endgame is to reduce the traction inverter size (≥ 13.4 kW [peak]/L), weight (≥ 14.1 kW [peak]/kg), and cost (≤ $182/100,000) relative to output power while maintaining 15-year reliability metrics [1].

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