3D ICs with through-silicon vias (TSVs) can achieve high performance while exacerbating the problem of heat removal. This necessitates the use of more aggressive cooling solutions such as micropin-fin based fluidic cooling. However, micropin-fin cooling comes with overheads such as non-uniform cooling capacity along the flow direction and restriction on the position of TSVs to where pins exist. 3D gate and TSV placement approaches un-aware of these drawbacks may lead to detrimental effects and even infeasible chip design. In this paper, we present a hierarchical partitioning based algorithm for co-placing gates and TSVs to co-optimize the wire-length and in-layer temperature uniformity, given the logical level netlist and layer assignment of gates. Compared to the wire-length driven gate placement followed by a TSV legalization stage, our approach can achieve up to 75% and 25% reduction of in-layer temperature variation and peak temperature, respectively, with the cost of 13% increase in wire-length.
- Electronic and Photonic Packaging Division
Co-Placement for Pin-Fin Based Micro-Fluidically Cooled 3D ICs
Yang, Z, & Srivastava, A. "Co-Placement for Pin-Fin Based Micro-Fluidically Cooled 3D ICs." Proceedings of the ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. Volume 1: Thermal Management. San Francisco, California, USA. July 6–9, 2015. V001T09A036. ASME. https://doi.org/10.1115/IPACK2015-48354
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